LOTNo.
LOTNo.
MCH6448
Power MOSFET
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20V, 22m , 8A, Single N-Channel
V R (on) Max I
DSS DS D Max
Features
22m @ 4.5V
Low On-Resistance
28m @ 2.5V
20V 8A
1.2V Drive
39m @ 1.8V
ESD Diode-Protected Gate
124m @ 1.2V
Pb-Free, Halogen Free and RoHS Compliance
Specifications
Electrical Connection
N-Channel
Absolute Maximum Ratings at Ta = 25C
Unit
Parameter Symbol Value
1,2,5,6
Drain to Source Voltage V 20V
DSS
Gate to Source Voltage V 9V
GSS
Drain Current (DC) I 8A
D
1:Drain
Drain Current (Pulse)
3
2:Drain
A
I 32
DP
PW10s, duty cycle1% 3:Gate
4:Source
Power Dissipation
5:Drain
When mounted on ceramic substrate P 1.5W
D 6:Drain
4
2
(1200mm 0.8mm)
C
Junction Temperature Tj 150
C
Storage Temperature Tstg 55 to +150
Packing Type : TL Marking
Thermal Resistance Ratings
Parameter Symbol Value Unit ZX
Junction to Ambient
TL
C/W
When mounted on ceramic substrate R 83.3
JA
2
(1200mm 0.8mm)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
Semiconductor Components Industries, LLC, 2015
1 Publication Order Number :
March 2015 - Rev. 1
MCH6448/D MCH6448
Electrical Characteristics at Ta = 25C
Value
Parameter Symbol Conditions Unit
min typ max
Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V
BR DSS D GS
Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A
DSS DS GS
Gate to Source Leakage Current I V =7.2V, V=0V 10 A
GSS GS DS
Gate Threshold Voltage V(th) V =10V, I=1mA 0.3 1.0V
GS DS D
Forward Transconductance g V =10V, I=4A 7.7 S
FS DS D
R(on)1 I =4A, V=4.5V 17 22m
DS D GS
R(on)2 I =2A, V=2.5V 20 28m
DS D GS
Static Drain to Source On-State Resistance
R(on)3 I =1A, V=1.8V 26 39m
DS D GS
R(on)4 I =0.5A, V=1.2V 62 124m
DS D GS
Input Capacitance
Ciss 705 pF
Output Capacitance
Coss V =10V, f=1MHz 150 pF
DS
Reverse Transfer Capacitance
Crss 125 pF
Turn-ON Delay Time
t (on) 6 ns
d
Rise Time
t 47 ns
r
See specified Test Circuit
Turn-OFF Delay Time
t (off) 103 ns
d
Fall Time
t 81 ns
f
Total Gate Charge
Qg 11.2 nC
Gate to Source Charge
Qgs V =10V, V =4.5V, I =8A 1.3 nC
DS GS D
Gate to Drain Miller Charge
Qgd 2.8 nC
Forward Diode Voltage
V I =8A, V=0V 0.8 1.2V
SD S GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V =10V
V
IN DD
4.5V
0V
I =4A
D
V
IN
R =2.5
L
D V
OUT
PW=10s
D.C.1%
G
MCH6448
P.G
50
S
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2