LOT No. LOT No. MCH6660 Power MOSFET www.onsemi.com 20V, 136m, 2A, 20V, 266m, 1.5A Complementary Dual Features ON-resistance Nch : R (on)1=105m(typ.) 1.8V Drive DS Pch : R (on)1=205m (typ.) ESD Diode - Protected Gate DS Pb-Free, Halogen Free and RoHS Compliance Ultrasmall Package MCPH6(2.0mm 2.1mm mmt) 0.85 Nch MOSFET and Pch MOSFET are put in MCPH6 Package Applications General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage V 20 --20 V DSS Gate-to-Source Voltage V 10 10 V GSS Drain Current (DC) I 2 --1.5 A D Drain Current (Pulse) I PW10s, duty cycle1% 8 --6 A DP 2 Power Dissipation P When mounted on ceramic substrate (900mm 0.8mm) 1unit 0.8 W D Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) Package : MCPH6 7022A-006 JEITA, JEDEC : SC-88, SC-70-6, SOT-363 Minimum Packing Quantity : 3,000 pcs./reel MCH6660-TL-H 2.0 0.15 MCH6660-TL-W Packing Type : TL Marking 65 4 0 to 0.02 XM 12 3 TL 0.65 0.3 Electrical Connection 1 : Source1 65 4 2 : Gate1 3 : Drain2 12 3 4 : Source2 5 : Gate2 6 : Drain1 MCPH6 65 4 132 ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2014 Publication Order Nunber: 1 December 2014 - Rev. 2 MCH6660/D 2.1 0.85 0.07 0.25 1.6 0.25MCH6660 Electrical Characteristics at Ta=25C Value Parameter Symbol Conditions Unit min typ max N-channel Drain-to-Source Breakdown Voltage V I =1mA, V =0V 20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =20V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =1mA 0.4 1.3 V GS DS D g Forward Transconductance V =10V, I =1A 1.9 S FS DS D R (on)1 I =1A, V =4.5V 105 136 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =0.5A, V =2.5V 147 205 m DS D GS R (on)3 I =0.3A, V =1.8V 212 318 m DS D GS Input Capacitance Ciss 128 pF Output Capacitance Coss V =10V, f=1MHz 28 pF DS Reverse Transfer Capacitance Crss 21 pF Turn-ON Delay Time t (on) 5.1 ns d Rise Time t 11 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 14.5 ns d Fall Time t 12 ns f Total Gate Charge Qg 1.8 nC Gate-to-Source Charge Qgs V =10V, V =4.5V, I =2A 0.3 nC DS GS D Gate-to-Drain Miller Charge Qgd 0.55 nC Forward Diode Voltage V I =2A, V =0V 0.85 1.2 V SD S GS P-channel Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--20V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =--10V, I =--1mA --0.4 --1.4 V GS DS D g Forward Transconductance V =--10V, I =--750mA 1.9 S FS DS D R (on)1 I =--750mA, V =--4.5V 205 266 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--300mA, V =--2.5V 295 413 m DS D GS R (on)3 I =--100mA, V =--1.8V 430 645 m DS D GS Input Capacitance Ciss 120 pF Output Capacitance Coss V =--10V, f=1MHz 26 pF DS Reverse Transfer Capacitance Crss 20 pF Turn-ON Delay Time t (on) 5.3 ns d Rise Time t 9.7 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 16 ns d Fall Time t 14 ns f Total Gate Charge Qg 1.7 nC Gate-to-Source Charge Qgs V =--10V, V =--4.5V, I =--1.5A 0.28 nC DS GS D Gate-to-Drain Miller Charge Qgd 0.47 nC Forward Diode Voltage V I =--1.5A, V =0V --0.89 --1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient R 156.3 C/W JA 2 When mounted on ceramic substrate (900mm 0.8mm) 1unit www.onsemi.com 2