MDD1502 Single N-Channel Trench MOSFET 30V
MDD1502
Single N-channel Trench MOSFET 30V, 45.7A, 8.5m
General Description Features
The MDD1502 uses advanced MagnaChips MOSFET V = 30V
DS
Technology, which provides high performance in on-state I = 45.7A @V = 10V
D GS
resistance, fast switching performance and excellent R
DS(ON) (MAX)
< 8.5m @V = 10V
quality. MDD1502 is suitable device for DC to DC GS
converter and general purpose applications. < 13.0m @V = 4.5V
GS
100% UIL Tested
100% Rg Tested
D
G
S
o
Absolute Maximum Ratings (Ta = 25 C)
Characteristics Symbol Rating Unit
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 20 V
GSS
o
T =25 C 45.7
C
o
T =70 C 36.6
C
(1)
Continuous Drain Current I A
D
o (3)
T =25 C 20.4
A
o (3)
T =70 C 16.3
A
Pulsed Drain Current I 100 A
DM
o
T =25 C 31.2
C
o
TC=70 C 20.0
Power Dissipation P W
D
o (3)
T =25 C 6.2
A
o (3)
T =70 C 4.0
A
(2)
Single Pulse Avalanche Energy E 47 mJ
AS
o
Junction and Storage Temperature Range T , T -55~150 C
J stg
Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient R 20.0
JA
o
C/W
Thermal Resistance, Junction-to-Case R 4.0
JC
1
May. 2011. Version 1.2 MagnaChip Semiconductor Ltd. MDD1502 Single N-Channel Trench MOSFET 30V
Ordering Information
Part Number Temp. Range Package Packing Quantity Rohs Status
o
MDD1502RH -55~150 C D-PAK Tape & Reel 3000 units Halogen Free
o
Electrical Characteristics (T =25 C)
J
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BV I = 250A, V = 0V 30 - -
DSS D GS
V
Gate Threshold Voltage V V = V , I = 250A 1.6 2.0 2.7
GS(th) DS GS D
V = 30V, V = 0V - - 1
DS GS
Drain Cut-Off Current I
DSS
o
T =55 C - - 5 A
J
Gate Leakage Current I V = 20V, V = 0V - - 0.1
GSS GS DS
V = 10V, I = 16A - 7.4 8.5
GS D
o
Drain-Source ON Resistance R T =125 C - 10.7 12.3 m
DS(ON) J
V = 4.5V, I = 13A - 10.8 13.0
GS D
Forward Transconductance g V = 5V, I = 10A - 25 - S
fs DS D
Dynamic Characteristics
Total Gate Charge Q 10.7 14.3 17.9
g(10V)
Total Gate Charge Q 5.0 6.7 8.4
g(4.5V)
V = 15.0V, I = 16A,
DS D
nC
V = 10V
GS
Gate-Source Charge Q - 2.6 -
gs
Gate-Drain Charge Q - 2.3 -
gd
Input Capacitance C 696 928 1160
iss
V = 15.0V, V = 0V,
DS GS
Reverse Transfer Capacitance C 68 90 113 pF
rss
f = 1.0MHz
Output Capacitance C 132 176 220
oss
Turn-On Delay Time t - 7.2 -
d(on)
Rise Time t - 12.0 -
r
V = 10V, V = 15.0V,
GS DS
ns
I = 16A , R = 3.0
D G
Turn-Off Delay Time t - 22.8 -
d(off)
Fall Time t - 8.1 -
f
Gate Resistance Rg f=1 MHz - 3.5 5.0
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage V I = 16A, V = 0V - 0.8 1.1 V
SD S GS
Body Diode Reverse Recovery Time t - 20.4 30.6 ns
rr
I = 16A, dl/dt = 100A/s
F
Body Diode Reverse Recovery Charge Q - 11.9 17.9 nC
rr
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. E is tested at starting Tj = 25, L = 0.1mH, I = 17.0A, V = 27V, V = 10V.
AS AS DD GS
3. T < 10sec.
2
May. 2011. Version 1.2 MagnaChip Semiconductor Ltd.