Thyristor Datasheet MCR08B, MCR08M Surface Mount 600V - 800V RoHS Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. Features Sensitive Gate Trigger Current Surface Mount Package Blocking Voltage to 600 V Lead-free and RoHS- compliant Glass Passivated Surface for Reliability and Uniformity Functional Diagram G Additional Information A K Pin Out 4 Resources Accessories Samples 1 2 3 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 05/13/21Thyristor Datasheet MCR08B, MCR08M Surface Mount 600V - 800V Maximum Ratings (T = 25 C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) MCR08B V , 200 DRM V (Sine Wave, R =1 k T = 25 to 110C) MCR08M V 600 GK J RRM On-State RMS Current (All Conduction Angles T = 80C) I 0.8 A C T (RMS) Peak Non-Repetitive Surge Current I 8.0 A TSM (1/2 Cycle Sine Wave, 60 Hz, T = 25C) C 2 Circuit Fusing Consideration (t = 8.3 ms) I t 0.4 Asec Forward Peak Gate Power (T = 80C, t = 1.0 s) P 0.1 W C GM Average Gate Power (t = 8.3 ms, T = 80C) P 0.01 W C GM (AV) Operating Junction Temperature Range T -40 to +110 C J Storage Temperature Range T -40 to +150 C stg Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, JJunctiontoAmbient PCB Mounted per Figure 1 R 156 C/W JA Thermal Resistance, JunctiontoTab Measured on Anode Tab Adjacent to Epoxy R 25 C/W JA Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Electrical Characteristics - OFF (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit T = 25C - - 10 A Peak Repetitive Forward or Reverse Blocking Current (Note 3) I J DRM (V = Rated V or V , R = 1 k I T = 110C - - 200 A AK DRM RRM GK RRM J Electrical Characteristics - ON (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Forward On-State Voltage (Note 2) (I = 1.0 A Peak) V 1.7 V T TM Gate Trigger Current (Continuous dc) (Note 4) (V = 12 Vdc, R = 100 ) I 200 A AK L GT Holding Current (Note 3) (V = 12 Vdc, Initiating Current = 20 mA) I 5.0 mA AK H Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 ) V 0.8 V D L GT TurnOn Time (V = 12 Vdc, I = 5 Adc, I = 5 mA) t 1.25 s AK TM GT gt 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. RGK = 1000 Q is included in measurement. 4. RGK is not included in measurement. Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate-of-Rise of Off State Voltage dv/dt 10 V/s (Vpk = Rated VDRM, T = 110C, RGK = 1 k, Exponential Method) C 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 05/13/21