MCR69-2, MCR69-3
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for overvoltage protection in crowbar circuits.
Features
MCR692, MCR693
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase R 1.5 C/W
JC
Thermal Resistance, JunctiontoAmbient R 60 C/W
JA
Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds T 260 C
L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.)
C
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current I , I
DRM RRM
(V = Rated V or V , Gate Open) T = 25C 10 A
AK DRM RRM J
T = 125C 2.0 mA
J
ON CHARACTERISTICS
Peak Forward On-State Voltage V V
TM
(I = 50 A) (Note 4) 1.8
TM
(I = 750 A, t = 1 ms) (Note 5) 6.0
TM w
Gate Trigger Current (Continuous dc) I 2.0 7.0 30 mA
GT
(V = 12 V, R = 100 )
D L
Gate Trigger Voltage (Continuous dc) V 0.65 1.5 V
GT
(V = 12 V, R = 100 )
D L
Gate NonTrigger Voltage V 0.2 0.40 V
GD
(V = 12 Vdc, R = 100 , T = 125C)
D L J
Holding Current I 3.0 15 50 mA
H
(V = 12 V, Initiating Current = 200 mA, Gate Open)
D
Latching Current I 60 mA
L
(V = 12 Vdc, I = 150 mA)
D G
Gate Controlled Turn-On Time (Note 6) t 1.0 s
gt
(V = Rated V , I = 150 mA)
D DRM G
(I = 50 A Peak)
TM
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage dv/dt 10 V/s
(V = Rated V , Gate Open, Exponential Waveform, T = 125C)
D DRM J
Critical Rate-of-Rise of On-State Current di/dt 100 A/s
I = 150 mA T = 125C
G J
4. Pulse duration 300 s, duty cycle 2%.
5. Ratings apply for t = 1 ms. See Figure 1 for I capability for various durations of an exponentially decaying current waveform. t is defined
w TM w
as 5 time constants of an exponentially decaying current pulse.
6. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.