X-On Electronics has gained recognition as a prominent supplier of MCR706AT4G SCRs across the USA, India, Europe, Australia, and various other global locations. MCR706AT4G SCRs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

MCR706AT4G ON Semiconductor

MCR706AT4G electronic component of ON Semiconductor
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Part No.MCR706AT4G
Manufacturer: ON Semiconductor
Category: SCRs
Description: ON Semiconductor SCRs THY 4A 400V SCR
Datasheet: MCR706AT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.2706 ea
Line Total: USD 2.27 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.2706
10 : USD 0.8459
100 : USD 0.6336
500 : USD 0.5236
1000 : USD 0.4135
2500 : USD 0.3932

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Height
Length
Type
Width
Cnhts
Hts Code
Product Type
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We are delighted to provide the MCR706AT4G from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCR706AT4G and other electronic components in the SCRs category and beyond.

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Thyristors Surface Mount 100V -600V > MCR70xA Series Pb MCR70xA Series Description PNPN Componants designed for high volume, low cost consumer applications such as temperature, light and speed control process and remote control and warning systems where reliability of operation is critical. Features Small Size UL Recognized compound meeting flammability Passivated Die Surface for rating V-0. Reliability and Uniformity ESD Ratings: Human Low Level Triggering and Body Model, 3B > 8000 V Holding Characteristics Machine Recommend Electrical Pin Out Model, C > 400 V Replacement for C106 PbFree Packages are Surface Mount Package Available Case 369C To Obtain DPAK in Straight Lead Version 4 (Shipped in Sleeves): Add 1 Suffix to Componant 2 1 Number, i.e., MCR706A1 3 1 2 3 Functional Diagram Additional Information G A K Samples Datasheet Resources 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.11/17/20Thyristors Surface Mount 100V -600V > MCR70xA Series Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit MCR703A 100 Peak Repetitive OffState Voltage (Note 1) V , DRM MCR706A 400 V (T = 40 to +110C, Sine Wave, 50 to 60 Hz, R = 1 k ) V C GK RRM MCR708A 600 MCR703A 150 Peak Non-Repetitive OffState Voltage MCR706A V 450 V DSM (180 Conduction Angles T = 85C) C MCR708A 650 OnState RMS Current (180 Conduction Angles T = 90C) I 4.0 A C T(RMS) Average On-State Current T = 40 to +90C 2.6 C I A T(AV) (180 Conduction Angles) T = +100C 1.6 C Non-Repetitive Surge Current 25 (1/2 Cycle, Sine Wave 60 Hz, T = 110C) I A J TSM 35 (1/2 Cycle, Sine Wave 1.5 ms, T = 110C) J 2 Circuit Fusing Consideration (t = 8.3 ms) I t 2.6 Asec Forward Peak Gate Power (Pulse Width 1.0 sec, T = 90C) P 0.5 W C GM Forward Peak Gate Current (Pulse Width 1.0 sec, T = 90C) I 0.2 A C GM Forward Average Gate Power (t = 8.3 ms, TC = 90C) P 0.1 W G(AV) Operating Junction Temperature Range T -40 to +110 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the Componant. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect Componant reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the Componants are exceeded. Thermal Characteristics* Rating Symbol Value Unit Thermal Resistance, JunctiontoCase R 3.0 JC C/W Thermal Resistance, JunctiontoAmbient (Note 2) R 80 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for T 260 C L 10 Seconds 2. Case 369C when surface mounted on minimum pad sizes recommended. Electrical Characteristics - OFF (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current T = 25C I - - 10 J DRM A (V = Rated V or V , R = 1 k ) T = 110C I - - 200 AK DRM RRM GK J RRM Electrical Characteristics - ON (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit Peak ForwardO Voltage V V TM (I = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) 2.2 TM Gate Trigger Current (Continuous dc) (Note 3) T = 25C 25 75 J I A GT (V = 12 V R = 24 ) T = 40C 300 AK L J Gate Trigger Voltage (Continuous dc) (Note 3) T = 25C 0.8 J V V GT (V = 12 V R = 24 ) T = 40C 1.0 AK L J Gate Non-Trigger Voltage (Note 3) (V = 12 Vdc R = 100 , T =110) V 0.2 V AK L C GD Holding Current 5.0 (V = 12 Vdc, R = 1 k ) T = 25C I mA AK GK C H 10 (Initiating Current = 20 mA) T = 40C C Peak Reverse Gate Blocking Voltage (I = 10 A) V 10 12.5 18 V GR RGM Peak Reverse Gate Blocking Current (V = 10 V) I 1.2 A GR RGM Total Turn-On Time (Source Voltage = 12 V, RS = 6 kQ) (I = 8.2 A, I = 2 mA, Rated V ) (Rise Time = 20 ns, t 2.0 s TM GT DRM gt Pulse Width = 10 s) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BO.11/17/20

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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FAIRCHILD (ON SEMICONDUCTOR)
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ON
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