X-On Electronics has gained recognition as a prominent supplier of MCR25NG SCRs across the USA, India, Europe, Australia, and various other global locations. MCR25NG SCRs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

MCR25NG ON Semiconductor

MCR25NG electronic component of ON Semiconductor
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Part No.MCR25NG
Manufacturer: ON Semiconductor
Category: SCRs
Description: ON Semiconductor SCRs 800V 25A
Datasheet: MCR25NG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.354 ea
Line Total: USD 2.35 
Availability - 906
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
906
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.354
10 : USD 1.463
100 : USD 1.199
500 : USD 1.0681
1000 : USD 1.0098
2000 : USD 0.979

242
Ship by Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 3.15
25 : USD 1.575
50 : USD 1.4175
75 : USD 1.1812
100 : USD 1.0631

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Product Type
Subcategory
Taric
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We are delighted to provide the MCR25NG from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCR25NG and other electronic components in the SCRs category and beyond.

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Thyristor Datasheet MCR25DG, MCR25MG, MCR25NG Silicon Controlled Rectifiers Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies or wherever halfwave, silicon gatecontrolled devices are needed. Features Blocking Voltage to 800 Volts Minimum and Maximum Values of IGT, VGT, and IH OnState Current Rating of Specified for Ease of Design 25 Amperes RMS High Immunit y to dv/dt 100 High Surge Current Capability V/sec Minimum at 125C 300 Amperes These are PbFree Devices R ugged Economical TO220AB Package Glass Passivated Junctions for Reliability and Uniformity Additional Information Functional Diagram G A K Resources Accessories Samples Pin Out 4 TO-220AB 1 2 3 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 05/13/21Thyristor Datasheet MCR25DG, MCR25MG, MCR25NG Silicon Controlled Rectifiers Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit MCR25DG 400 Peak Repetitive OffState Voltage (Note 1) V , DRM MCR25MG 600 V ( 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) V RRM MCR25NG 800 On-State RMS Current (180 Conduction Angles T = 80C) I 25 A C T (RMS) Peak Non-Repetitive Surge Current I 300 A TSM (1/2 Cycle, Sine Wave 60 Hz, T = 125C) J 2 Circuit Fusing Consideration (t = 8.3 ms) I t 373 Asec Forward Peak Gate Power (Pulse Width 1.0 sec,T = 80C) P 20.0 W C GM Forward Average Gate Power (t = 8.3 msec, T = 80C) P 0.5 W C GM (AV) Forward Peak Gate Current (Pulse Width 1.0 sec, T = 80C) I 2.0 A C GM Operating Junction Temperature Range T -40 to 125 C J Storage Temperature Range T -40 to 150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. DRM RRM Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 1.5 8JC Thermal Resistance C/W JunctiontoAmbient R 62.5 8JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds Electrical Characteristics - OFF (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit T = 25C - - 0.01 Peak Repetitive Forward or Reverse Blocking Current I , J DRM mA I (V = Rated V or V , Gate Open) T = 125C - - 2.0 AK DRM RRM RRM J Electrical Characteristics - ON (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit Peak Forward OnState Voltage (Note 2) (I = 50 A) V 1.8 V TM TM Gate Trigger Current (Continuous dc) (V = 12 V R = 100 ) I 4.0 12 30 mA D L GT Holding Current (Anode Voltage = 12 V, Initiating Current = 200 mA) I 5.0 13 40 mA H Latch Current (V = 12 V, I = 30 mA) I 35 80 mA D G L Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 ) V 0.5 0.67 1.0 V D L GT Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of OffState Voltage dv/dt 100 250 V/s (V = 67% of Rated V , Exponential Waveform, Gate Open, T = 125C) D DRM J Critical Rate of Rise of OnState Current di/dt 50 A/s (I = 50 A, Pw = 30 sec, diG/dt = 1 A/sec, I = 50 mA PK gt Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test Pulse Width 2.0 msec, Duty Cycle 2%. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 05/13/21

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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