Thyristor Datasheet MCR25DG, MCR25MG, MCR25NG Silicon Controlled Rectifiers Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies or wherever halfwave, silicon gatecontrolled devices are needed. Features Blocking Voltage to 800 Volts Minimum and Maximum Values of IGT, VGT, and IH OnState Current Rating of Specified for Ease of Design 25 Amperes RMS High Immunit y to dv/dt 100 High Surge Current Capability V/sec Minimum at 125C 300 Amperes These are PbFree Devices R ugged Economical TO220AB Package Glass Passivated Junctions for Reliability and Uniformity Additional Information Functional Diagram G A K Resources Accessories Samples Pin Out 4 TO-220AB 1 2 3 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 05/13/21Thyristor Datasheet MCR25DG, MCR25MG, MCR25NG Silicon Controlled Rectifiers Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit MCR25DG 400 Peak Repetitive OffState Voltage (Note 1) V , DRM MCR25MG 600 V ( 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) V RRM MCR25NG 800 On-State RMS Current (180 Conduction Angles T = 80C) I 25 A C T (RMS) Peak Non-Repetitive Surge Current I 300 A TSM (1/2 Cycle, Sine Wave 60 Hz, T = 125C) J 2 Circuit Fusing Consideration (t = 8.3 ms) I t 373 Asec Forward Peak Gate Power (Pulse Width 1.0 sec,T = 80C) P 20.0 W C GM Forward Average Gate Power (t = 8.3 msec, T = 80C) P 0.5 W C GM (AV) Forward Peak Gate Current (Pulse Width 1.0 sec, T = 80C) I 2.0 A C GM Operating Junction Temperature Range T -40 to 125 C J Storage Temperature Range T -40 to 150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. DRM RRM Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 1.5 8JC Thermal Resistance C/W JunctiontoAmbient R 62.5 8JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds Electrical Characteristics - OFF (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit T = 25C - - 0.01 Peak Repetitive Forward or Reverse Blocking Current I , J DRM mA I (V = Rated V or V , Gate Open) T = 125C - - 2.0 AK DRM RRM RRM J Electrical Characteristics - ON (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit Peak Forward OnState Voltage (Note 2) (I = 50 A) V 1.8 V TM TM Gate Trigger Current (Continuous dc) (V = 12 V R = 100 ) I 4.0 12 30 mA D L GT Holding Current (Anode Voltage = 12 V, Initiating Current = 200 mA) I 5.0 13 40 mA H Latch Current (V = 12 V, I = 30 mA) I 35 80 mA D G L Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 ) V 0.5 0.67 1.0 V D L GT Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of OffState Voltage dv/dt 100 250 V/s (V = 67% of Rated V , Exponential Waveform, Gate Open, T = 125C) D DRM J Critical Rate of Rise of OnState Current di/dt 50 A/s (I = 50 A, Pw = 30 sec, diG/dt = 1 A/sec, I = 50 mA PK gt Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test Pulse Width 2.0 msec, Duty Cycle 2%. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 05/13/21