X-On Electronics has gained recognition as a prominent supplier of MCR100-6RLRMG SCRs across the USA, India, Europe, Australia, and various other global locations. MCR100-6RLRMG SCRs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

MCR100-6RLRMG ON Semiconductor

MCR100-6RLRMG electronic component of ON Semiconductor
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Part No.MCR100-6RLRMG
Manufacturer: ON Semiconductor
Category: SCRs
Description: THYRISTOR SCR 0.8A 400V TO-92
Datasheet: MCR100-6RLRMG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.0831 ea
Line Total: USD 166.2 
Availability - 0
MOQ: 2000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6000
Multiples : 6000
6000 : USD 0

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2000
Multiples : 1
2000 : USD 0.0831
4000 : USD 0.0809
6000 : USD 0.0796

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2137
Multiples : 2137
2137 : USD 0.1769

   
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We are delighted to provide the MCR100-6RLRMG from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCR100-6RLRMG and other electronic components in the SCRs category and beyond.

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MCR100 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer MCR100 Series MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive OffState Voltage (Notes 1 and 2) V V DRM, (T = 40 to 110C, Sine Wave, 50 to 60 Hz R = 1 k ) V J GK RRM MCR100 3 100 MCR100 4 200 400 MCR100 6 600 MCR100 8 On-State RMS Current, (T = 80C) 180 Conduction Angles I 0.8 A C T(RMS) Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, T = 25C) I 10 A J TSM 2 2 Circuit Fusing Consideration, (t = 8.3 ms) I t 0.415 A s P 0.1 W Forward Peak Gate Power, (T = 25C, Pulse Width 1.0 s) A GM Forward Average Gate Power, (T = 25C, t = 8.3 ms) P 0.01 W A G(AV) Forward Peak Gate Current, (T = 25C, Pulse Width 1.0 s) I 1.0 A GM A V 5.0 V Reverse Peak Gate Voltage, (T = 25C, Pulse Width 1.0 s) GRM A Operating Junction Temperature Range Rate V and V T 40 to 110 C RRM DRM J Storage Temperature Range T 40 to 150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate DRM RRM voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. See ordering information for exact device number options. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance,Junction toCase 75 C/W R JC Junction toAmbient 200 R JA Lead Solder Temperature T 260 C L ( 1/16 from case, 10 secs max) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 3) I , I A DRM RRM T = 25C 10 C (V = Rated V and V R = 1 k )T = 110C 100 D DRM RRM GK C ON CHARACTERISTICS * Peak Forward OnState Voltage V 1.7 V TM (I = 1.0 A Peak T = 25C) TM A Gate Trigger Current (Note 4) T = 25C I 40 200 A C GT (V = 7.0 Vdc, R = 100 ) AK L Holding Current (Note 3) T = 25C I 0.5 5.0 mA C H (V = 7.0 Vdc, Initiating Current = 20 mA, R = 1 k )T = 40C 10 AK GK C Latch Current (Note 4) T = 25C I 0.6 10 mA C L (V = 7.0 V, Ig = 200 A) T = 40C 15 AK C Gate Trigger Voltage (Note 4) T = 25C V 0.62 0.8 V C GT (V = 7.0 Vdc, R = 100 )T = 40C 1.2 AK L C DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage dV/dt 20 35 V/ s (V = Rated V , Exponential Waveform, R = 1 k ,T = 110C) D DRM GK J Critical Rate of Rise of OnState Current di/dt 50 A/ s (I = 20 A Pw = 10 sec diG/dt = 1 A/ sec, Igt = 20 mA) PK *Indicates Pulse Test: Pulse Width 1.0 ms, Duty Cycle 1%. 3. R = 1000 included in measurement. GK 4. Does not include R in measurement. GK

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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