MCR100 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer MCR100 Series MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive OffState Voltage (Notes 1 and 2) V V DRM, (T = 40 to 110C, Sine Wave, 50 to 60 Hz R = 1 k ) V J GK RRM MCR100 3 100 MCR100 4 200 400 MCR100 6 600 MCR100 8 On-State RMS Current, (T = 80C) 180 Conduction Angles I 0.8 A C T(RMS) Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, T = 25C) I 10 A J TSM 2 2 Circuit Fusing Consideration, (t = 8.3 ms) I t 0.415 A s P 0.1 W Forward Peak Gate Power, (T = 25C, Pulse Width 1.0 s) A GM Forward Average Gate Power, (T = 25C, t = 8.3 ms) P 0.01 W A G(AV) Forward Peak Gate Current, (T = 25C, Pulse Width 1.0 s) I 1.0 A GM A V 5.0 V Reverse Peak Gate Voltage, (T = 25C, Pulse Width 1.0 s) GRM A Operating Junction Temperature Range Rate V and V T 40 to 110 C RRM DRM J Storage Temperature Range T 40 to 150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate DRM RRM voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. See ordering information for exact device number options. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance,Junction toCase 75 C/W R JC Junction toAmbient 200 R JA Lead Solder Temperature T 260 C L ( 1/16 from case, 10 secs max) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 3) I , I A DRM RRM T = 25C 10 C (V = Rated V and V R = 1 k )T = 110C 100 D DRM RRM GK C ON CHARACTERISTICS * Peak Forward OnState Voltage V 1.7 V TM (I = 1.0 A Peak T = 25C) TM A Gate Trigger Current (Note 4) T = 25C I 40 200 A C GT (V = 7.0 Vdc, R = 100 ) AK L Holding Current (Note 3) T = 25C I 0.5 5.0 mA C H (V = 7.0 Vdc, Initiating Current = 20 mA, R = 1 k )T = 40C 10 AK GK C Latch Current (Note 4) T = 25C I 0.6 10 mA C L (V = 7.0 V, Ig = 200 A) T = 40C 15 AK C Gate Trigger Voltage (Note 4) T = 25C V 0.62 0.8 V C GT (V = 7.0 Vdc, R = 100 )T = 40C 1.2 AK L C DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage dV/dt 20 35 V/ s (V = Rated V , Exponential Waveform, R = 1 k ,T = 110C) D DRM GK J Critical Rate of Rise of OnState Current di/dt 50 A/ s (I = 20 A Pw = 10 sec diG/dt = 1 A/ sec, Igt = 20 mA) PK *Indicates Pulse Test: Pulse Width 1.0 ms, Duty Cycle 1%. 3. R = 1000 included in measurement. GK 4. Does not include R in measurement. GK