MCH6663 Power MOSFET www.onsemi.com 30V, 188m, 1.8A, 30V, 325m, 1.5A, Complementary Dual Features V R (on) Max I DSS DS D Max ON-Resistance Nch : R (on)1=145m (typ) 188 m 10V DS N-Ch Pch : R (on)1=250m (typ) 343 m 4.5V 1.8A DS 30V 4V Drive 378 m 4V Complementary N-Channel and P-Channel MOSFET 325 m 10V P-Ch Pb-Free, Halogen Free and RoHS Compliance 1.5A 555 m 4.5V 30V 641 m 4V Specifications Absolute Maximum Ratings at Ta = 25C Electrical Connection N-channel Parameter Symbol P-channel Unit N-Channel and P-Channel Drain to Source Voltage V 30 30 V DSS 65 4 V Gate to Source Voltage V 20 20 GSS Drain Current (DC) I 1.8 1.5 A D 1:Source1 2:Gate1 Drain Current (Pulse) I 7.2 6 3:Drain2 A DP PW10s, duty cycle1% 4:Source2 5:Gate2 Power Dissipation 6:Drain1 When mounted on ceramic substrate P 0.8 W D 2 (900mm 0.8mm) 1unit 132 150 Junction Temperature Tj C 55 to +150 C Storage Temperature Tstg This product is designed to ESD immunity < 200V*, so please take care when handling. Packing Type : TL Marking * Machine Model Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient TL R 156.25 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) 1unit Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 3 MCH6663/D MCH6663 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max N-channel Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=0.9A 1.1 S FS DS D R(on)1 I =0.9A, V=10V 145 188m DS D GS Static Drain to Source On-State Resistance R(on)2 I =0.5A, V=4.5V 245 343m DS D GS R(on)3 I =0.5A, V=4V 270 378m DS D GS Input Capacitance Ciss 88 pF Output Capacitance Coss V =10V, f=1MHz 19 pF DS Reverse Transfer Capacitance Crss 11 pF Turn-ON Delay Time t (on) 3.4 ns d Rise Time t 3.6 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 10.5 ns d Fall Time t 4.0 ns f Total Gate Charge Qg 2.0 nC Gate to Source Charge Qgs V =15V, V =10V, I =1.8A 0.33 nC DS GS D Gate to Drain Miller Charge Qgd 0.29 nC Forward Diode Voltage V I =1.8A, V=0V 0.86 1.2V SD S GS P-channel Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transconductance g V =10V, I =0.8A 1.3 S FS DS D R(on)1 I =0.8A, V =10V 250 325m DS D GS Static Drain to Source On-State Resistance R(on)2 I =0.4A, V =4.5V 397 555m DS D GS R(on)3 I =0.4A, V =4V 458 641m DS D GS Input Capacitance Ciss 82 pF Output Capacitance Coss V =10V, f=1MHz 22 pF DS Reverse Transfer Capacitance Crss 16 pF Turn-ON Delay Time t (on) 4.0 ns d Rise Time t 3.3 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 12 ns d Fall Time t 5.4 ns f Total Gate Charge Qg 2.2 nC Gate to Source Charge Qgs V =15V, V =10V, I =1.5A 0.36 nC DS GS D Gate to Drain Miller Charge Qgd 0.49 nC Forward Diode Voltage V I =1.5A, V=0V 0.9 1.5 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2