X-On Electronics has gained recognition as a prominent supplier of MCH6663-TL-W MOSFETs across the USA, India, Europe, Australia, and various other global locations. MCH6663-TL-W MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MCH6663-TL-W ON Semiconductor

MCH6663-TL-W electronic component of ON Semiconductor
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Part No.MCH6663-TL-W
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PCH+NCH 4V DRIVE SER
Datasheet: MCH6663-TL-W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 6000
Multiples : 3000
6000 : USD 0.109
60000 : USD 0.1045
600000 : USD 0.1024
N/A

Obsolete
0
MOQ : 2727
Multiples : 1
2727 : USD 0.1159
N/A

Obsolete
0
MOQ : 5
Multiples : 5
5 : USD 0.0833
50 : USD 0.0814
150 : USD 0.0802
500 : USD 0.0791
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.424
10 : USD 0.6422
100 : USD 0.319
500 : USD 0.2392
1000 : USD 0.1792
3000 : USD 0.1533
9000 : USD 0.144
24000 : USD 0.1305
45000 : USD 0.1295
N/A

Obsolete
   
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We are delighted to provide the MCH6663-TL-W from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH6663-TL-W and other electronic components in the MOSFETs category and beyond.

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MCH6663 Power MOSFET www.onsemi.com 30V, 188m, 1.8A, 30V, 325m, 1.5A, Complementary Dual Features V R (on) Max I DSS DS D Max ON-Resistance Nch : R (on)1=145m (typ) 188 m 10V DS N-Ch Pch : R (on)1=250m (typ) 343 m 4.5V 1.8A DS 30V 4V Drive 378 m 4V Complementary N-Channel and P-Channel MOSFET 325 m 10V P-Ch Pb-Free, Halogen Free and RoHS Compliance 1.5A 555 m 4.5V 30V 641 m 4V Specifications Absolute Maximum Ratings at Ta = 25C Electrical Connection N-channel Parameter Symbol P-channel Unit N-Channel and P-Channel Drain to Source Voltage V 30 30 V DSS 65 4 V Gate to Source Voltage V 20 20 GSS Drain Current (DC) I 1.8 1.5 A D 1:Source1 2:Gate1 Drain Current (Pulse) I 7.2 6 3:Drain2 A DP PW10s, duty cycle1% 4:Source2 5:Gate2 Power Dissipation 6:Drain1 When mounted on ceramic substrate P 0.8 W D 2 (900mm 0.8mm) 1unit 132 150 Junction Temperature Tj C 55 to +150 C Storage Temperature Tstg This product is designed to ESD immunity < 200V*, so please take care when handling. Packing Type : TL Marking * Machine Model Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient TL R 156.25 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) 1unit Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 3 MCH6663/D MCH6663 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max N-channel Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=0.9A 1.1 S FS DS D R(on)1 I =0.9A, V=10V 145 188m DS D GS Static Drain to Source On-State Resistance R(on)2 I =0.5A, V=4.5V 245 343m DS D GS R(on)3 I =0.5A, V=4V 270 378m DS D GS Input Capacitance Ciss 88 pF Output Capacitance Coss V =10V, f=1MHz 19 pF DS Reverse Transfer Capacitance Crss 11 pF Turn-ON Delay Time t (on) 3.4 ns d Rise Time t 3.6 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 10.5 ns d Fall Time t 4.0 ns f Total Gate Charge Qg 2.0 nC Gate to Source Charge Qgs V =15V, V =10V, I =1.8A 0.33 nC DS GS D Gate to Drain Miller Charge Qgd 0.29 nC Forward Diode Voltage V I =1.8A, V=0V 0.86 1.2V SD S GS P-channel Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transconductance g V =10V, I =0.8A 1.3 S FS DS D R(on)1 I =0.8A, V =10V 250 325m DS D GS Static Drain to Source On-State Resistance R(on)2 I =0.4A, V =4.5V 397 555m DS D GS R(on)3 I =0.4A, V =4V 458 641m DS D GS Input Capacitance Ciss 82 pF Output Capacitance Coss V =10V, f=1MHz 22 pF DS Reverse Transfer Capacitance Crss 16 pF Turn-ON Delay Time t (on) 4.0 ns d Rise Time t 3.3 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 12 ns d Fall Time t 5.4 ns f Total Gate Charge Qg 2.2 nC Gate to Source Charge Qgs V =15V, V =10V, I =1.5A 0.36 nC DS GS D Gate to Drain Miller Charge Qgd 0.49 nC Forward Diode Voltage V I =1.5A, V=0V 0.9 1.5 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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