X-On Electronics has gained recognition as a prominent supplier of FQD3P50TM-AM002BLT MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQD3P50TM-AM002BLT MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQD3P50TM-AM002BLT ON Semiconductor

FQD3P50TM-AM002BLT electronic component of ON Semiconductor
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See Product Specifications
Part No.FQD3P50TM-AM002BLT
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET P-CH/500V/2.1A 4.9OHM
Datasheet: FQD3P50TM-AM002BLT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.9524
10 : USD 3.4219
30 : USD 3.089
100 : USD 2.7484
500 : USD 2.5144
1000 : USD 2.4498
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.7912
10 : USD 1.3045
100 : USD 1.1101
500 : USD 0.9269
1000 : USD 0.7523
2500 : USD 0.6022
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.4533
5 : USD 1.1941
18 : USD 0.9037
48 : USD 0.8535
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FQD3P50TM-AM002BLT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQD3P50TM-AM002BLT and other electronic components in the MOSFETs category and beyond.

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MOSFET P-Channel, QFET FQD3P50 -500 V, 4.9 , -2.1 A Description www.onsemi.com This PChannel enhancement mode power MOSFET is produced using ONSemiconductors proprietary planar stripe and DMOS D technology. This advanced MOSFET technology has been especially tailored to reduce onstate resistance, and to provide superior switching performance and high avalanche energy strength. These G devices are suitable for switched mode power supplies, active power S factor correction (PFC), and electronic lamp ballasts. DPAK3 CASE 369AS Features 2.1 A, 500 V, R = 4.9 (Max.) V = 10 V, DS(on) GS S I = 1.05 A D Low Gate Charge (Typ. 18 nC) Low Crss (Typ. 9.5 pF) G 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant D ABSOLUTE MAXIMUM RATINGS (T = 20C unless otherwise noted) C Symbol Parameter Value Unit MARKING DIAGRAM V DrainSource Voltage 500 V DSS I Drain Current A D Continuous (T = 25C) 2.1 C Continuous (T = 100C) 1.33 C Y&Z&3&K I Drain Current Pulsed (Note 1) 8.4 A DM FQD 3P50 V 30 GateSource Voltage V GSS E Single Pulsed Avalanche Energy (Note 2) 250 mJ AS I Avalanche Current (Note 1) 2.1 A AR E Repetitive Avalanche Energy (Note 1) 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Y = ON Semiconductor Logo &Z = Assembly Code Power Dissipation (T = 25C) (Note 4) 2.5 W P A D &3 = Date Code (Year and Week) &K = Lot Code Power Dissipation (T = 25C) 50 W C FQD3P50 = Specific Device Code Derate above 25C 0.4 W/C T , T Operating and Storage Temperature 55 to +150 C J STG Range ORDERING INFORMATION T Maximum lead temperature for soldering 300 C L Device Package Shipping purposes, 1/8 from case for 5 seconds FQD3P50 DPAK3 2,500 / Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Tape & Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 1. Repetitive Rating: Pulse width limited by maximum junction temperature. including part orientation and tape sizes, please 2. L = 102 mH, I = 2.1 A, V = 50 V, R = 25 , Starting T = 25C. AS DD G J refer to our Tape and Reel Packaging Specification 3. I 2.7 A, di/dt 200 A/ms, V BV , Starting T = 25C. SD DD DSS J Brochure, BRD8011/D. 4. When mounted on the minimum pad size recommended (PCB Mount). Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: September, 2019 Rev. 4 FQD3P50/DFQD3P50 THERMAL CHARACTERISTICS Symbol Parameter FQD3P50 Unit RJC Thermal Resistance, JunctiontoCase, Max. 2.5 C/W RJA Thermal Resistance, JunctiontoAmbient, Max. (Note 5) 50 C/W RJA Thermal Resistance, JunctiontoAmbient, Max. 110 C/W 5. When mounted on the minimum pad size recommended (PCB Mount). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Characteristic Test Conditions Min Typ Max Unit OFF CHARACTERISTICS V = 0 V, I = 250 mA BV DrainSource Breakdown Voltage 500 V DSS GS D BV / T Breakdown Voltage Temperature Coef- I = 250 mA, Referenced to 25C 0.42 V/C DSS J D ficient Zero Gate Voltage Drain Current I V = 500 V, V = 0 V 1 A DSS DS GS V = 400 V, T = 125C A 10 DS C I GateBody Leakage Current, Forward V = 30 V, V = 0 V 100 nA GSSF GS DS I V = 30 V, V = 0 V GateBody Leakage Current, Reverse 100 nA GSSR GS DS ON CHARACTERISTICS V V = V , I = 250 mA Gate Threshold Voltage 3.0 5.0 V GS(th) DS GS D R Static DrainSource OnResistance V = 10 V, I = 1.05 A 3.9 4.9 GS D DS(on) g Forward Transconductance V = 50 V, I = 1.05 A 2.1 S FS DS D DYNAMIC CHARACTERISTICS C V = 25 V, V = 0 V, Input Capacitance 510 660 pF iss DS GS f = 1.0 MHz C Output Capacitance 70 90 pF oss C Reverse Transfer Capacitance 9.5 12 pF rss SWITCHING CHARACTERISTICS t V = 250 V, I = 2.7 A, TurnOn Delay Time DD D 12 35 ns d(on) R = 25 G t TurnOn Rise Time 56 120 ns r (Note 6) t TurnOff Delay Time 35 80 ns d(off) t TurnOff Fall Time 45 100 ns f Q Total Gate Charge 18 23 nC g V = 400 V, I = 2.7 A, DS D V = 10 V GS Q GateSource Charge 3.6 nC gs (Note 6) Q GateDrain Charge 9.2 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous DrainSource Diode Forward Current 2.1 A S I Maximum Pulsed DrainSource Diode Forward Current 8.4 A SM V V = 0 V, I = 2.1 A DrainSource Diode Forward Voltage 5.0 V SD GS S t V = 0 V, I = 2.7 A, Reverse Recovery Time 270 ns rr GS S dI / dt = 100 A/ms F Q Reverse Recovery Charge 1.5 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Essentially independent of operating temperature. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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