MOSFET P-Channel, QFET FQD3P50 -500 V, 4.9 , -2.1 A Description www.onsemi.com This PChannel enhancement mode power MOSFET is produced using ONSemiconductors proprietary planar stripe and DMOS D technology. This advanced MOSFET technology has been especially tailored to reduce onstate resistance, and to provide superior switching performance and high avalanche energy strength. These G devices are suitable for switched mode power supplies, active power S factor correction (PFC), and electronic lamp ballasts. DPAK3 CASE 369AS Features 2.1 A, 500 V, R = 4.9 (Max.) V = 10 V, DS(on) GS S I = 1.05 A D Low Gate Charge (Typ. 18 nC) Low Crss (Typ. 9.5 pF) G 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant D ABSOLUTE MAXIMUM RATINGS (T = 20C unless otherwise noted) C Symbol Parameter Value Unit MARKING DIAGRAM V DrainSource Voltage 500 V DSS I Drain Current A D Continuous (T = 25C) 2.1 C Continuous (T = 100C) 1.33 C Y&Z&3&K I Drain Current Pulsed (Note 1) 8.4 A DM FQD 3P50 V 30 GateSource Voltage V GSS E Single Pulsed Avalanche Energy (Note 2) 250 mJ AS I Avalanche Current (Note 1) 2.1 A AR E Repetitive Avalanche Energy (Note 1) 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Y = ON Semiconductor Logo &Z = Assembly Code Power Dissipation (T = 25C) (Note 4) 2.5 W P A D &3 = Date Code (Year and Week) &K = Lot Code Power Dissipation (T = 25C) 50 W C FQD3P50 = Specific Device Code Derate above 25C 0.4 W/C T , T Operating and Storage Temperature 55 to +150 C J STG Range ORDERING INFORMATION T Maximum lead temperature for soldering 300 C L Device Package Shipping purposes, 1/8 from case for 5 seconds FQD3P50 DPAK3 2,500 / Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Tape & Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 1. Repetitive Rating: Pulse width limited by maximum junction temperature. including part orientation and tape sizes, please 2. L = 102 mH, I = 2.1 A, V = 50 V, R = 25 , Starting T = 25C. AS DD G J refer to our Tape and Reel Packaging Specification 3. I 2.7 A, di/dt 200 A/ms, V BV , Starting T = 25C. SD DD DSS J Brochure, BRD8011/D. 4. When mounted on the minimum pad size recommended (PCB Mount). Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: September, 2019 Rev. 4 FQD3P50/DFQD3P50 THERMAL CHARACTERISTICS Symbol Parameter FQD3P50 Unit RJC Thermal Resistance, JunctiontoCase, Max. 2.5 C/W RJA Thermal Resistance, JunctiontoAmbient, Max. (Note 5) 50 C/W RJA Thermal Resistance, JunctiontoAmbient, Max. 110 C/W 5. When mounted on the minimum pad size recommended (PCB Mount). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Characteristic Test Conditions Min Typ Max Unit OFF CHARACTERISTICS V = 0 V, I = 250 mA BV DrainSource Breakdown Voltage 500 V DSS GS D BV / T Breakdown Voltage Temperature Coef- I = 250 mA, Referenced to 25C 0.42 V/C DSS J D ficient Zero Gate Voltage Drain Current I V = 500 V, V = 0 V 1 A DSS DS GS V = 400 V, T = 125C A 10 DS C I GateBody Leakage Current, Forward V = 30 V, V = 0 V 100 nA GSSF GS DS I V = 30 V, V = 0 V GateBody Leakage Current, Reverse 100 nA GSSR GS DS ON CHARACTERISTICS V V = V , I = 250 mA Gate Threshold Voltage 3.0 5.0 V GS(th) DS GS D R Static DrainSource OnResistance V = 10 V, I = 1.05 A 3.9 4.9 GS D DS(on) g Forward Transconductance V = 50 V, I = 1.05 A 2.1 S FS DS D DYNAMIC CHARACTERISTICS C V = 25 V, V = 0 V, Input Capacitance 510 660 pF iss DS GS f = 1.0 MHz C Output Capacitance 70 90 pF oss C Reverse Transfer Capacitance 9.5 12 pF rss SWITCHING CHARACTERISTICS t V = 250 V, I = 2.7 A, TurnOn Delay Time DD D 12 35 ns d(on) R = 25 G t TurnOn Rise Time 56 120 ns r (Note 6) t TurnOff Delay Time 35 80 ns d(off) t TurnOff Fall Time 45 100 ns f Q Total Gate Charge 18 23 nC g V = 400 V, I = 2.7 A, DS D V = 10 V GS Q GateSource Charge 3.6 nC gs (Note 6) Q GateDrain Charge 9.2 nC gd DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous DrainSource Diode Forward Current 2.1 A S I Maximum Pulsed DrainSource Diode Forward Current 8.4 A SM V V = 0 V, I = 2.1 A DrainSource Diode Forward Voltage 5.0 V SD GS S t V = 0 V, I = 2.7 A, Reverse Recovery Time 270 ns rr GS S dI / dt = 100 A/ms F Q Reverse Recovery Charge 1.5 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Essentially independent of operating temperature. www.onsemi.com 2