X-On Electronics has gained recognition as a prominent supplier of FQD4N50TMC MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQD4N50TMC MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQD4N50TMC ON Semiconductor

FQD4N50TMC electronic component of ON Semiconductor
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Part No.FQD4N50TMC
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: FQD4N50TMC
A low dropout voltage regulator with 500mA output current and ultra-low noise operation.
Datasheet: FQD4N50TMC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
208: USD 0.1789 ea
Line Total: USD 37.21 
Availability - 0
MOQ: 208  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 208
Multiples : 1
208 : USD 0.1789

   
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We are delighted to provide the FQD4N50TMC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQD4N50TMC and other electronic components in the MOSFETs category and beyond.

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FQD4N50TMC is a N-Channel MOSFET by ON Semiconductor. It is designed for high speed switching applications. It has an on-resistance of 4.5 ohms and a drain-source breakdown voltage of 500 volts. The maximum drain current for this transistor is 5 amperes. The maximum drain-source voltage is also 50 volts. The maximum gate-source voltage is 20 volts. It is in a TO-220AB package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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