X-On Electronics has gained recognition as a prominent supplier of FQD4P25TM_WS MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQD4P25TM_WS MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQD4P25TM_WS ON Semiconductor

FQD4P25TM_WS electronic component of ON Semiconductor
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Part No.FQD4P25TM_WS
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET 250V 3.1A 2.1Ohm P-Channel
Datasheet: FQD4P25TM_WS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.6511
10 : USD 0.6144
25 : USD 0.6144
100 : USD 0.6144
N/A

Obsolete
0
MOQ : 5
Multiples : 1
5 : USD 1.2502
N/A

Obsolete
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.319
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.6472
10 : USD 1.1986
100 : USD 0.8996
250 : USD 0.8946
500 : USD 0.7421
1000 : USD 0.5694
2500 : USD 0.5331
5000 : USD 0.5016
10000 : USD 0.4943
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.3027
5 : USD 0.8955
25 : USD 0.6513
67 : USD 0.6106
N/A

Obsolete
0
MOQ : 16
Multiples : 1
16 : USD 0.638
N/A

Obsolete
   
Manufacturer
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RoHS - XON
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Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the FQD4P25TM_WS from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQD4P25TM_WS and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FQD4P25TM -WS P-Channel QFET MOSFET FQD4P25TM-WS P-Channel QFET MOSFET -250 V, -3.1 A, 2.1 Features -3.1 A, -250 V, R = 2.1 (Max.) V = 10 V, DS(on) GS Description I = -1.55 A D This P-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 10 nC) produced using ON Semiconductor Semiconductors Low Crss (Typ. 10.3 pF) proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially 100% Avalanche Tested tailored to reduce on-state resistance, and to provide Improved dv/dt Capability superior switching performance and high avalanche RoHS Compliant energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S D G G S D-PAK D Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQD4P25TM-WS Unit V Drain-Source Voltage -250 V DSS I Drain Current - Continuous (T = 25C) -3.1 A D C - Continuous (T = 100C) -1.96 A C I Drain Current - Pulsed (Note 1) -12.4 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 280 mJ AS I (Note 1) Avalanche Current -3.1 A AR E Repetitive Avalanche Energy (Note 1) 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns Power Dissipation (T = 25C) * P 2.5 W A D Power Dissipation (T = 25C) 45 W C - Derate above 25C 0.36 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Unit FQD4P25TM -WS R Thermal Resistance, Junction to Case, Max. 2.78 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2011 Semiconductor Components Industries, LLC. Publication Order Number: August-2017, Rev. 3 FQD4P25TM-WS/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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