FQP13N50C / FQPF13N50C N-Channel QFET MOSFET November 2013 FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, R = 480 m (Max.) V = 10 V, DS(on) GS transistors are produced using Fairchilds proprietary, I = 6.5 A D Low Gate Charge (Typ. 43 nC) planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- Low Crss (Typ. 20 pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D G G D G S D TO-220 S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP13N50C FQPF13N50C Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25C) Drain Current 13 13 * A D C - Continuous (T = 100C) 8 8 * A C I (Note 1) Drain Current - Pulsed 52 52 * A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 860 mJ AS I Avalanche Current (Note 1) 13 A AR E (Note 1) Repetitive Avalanche Energy 19.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 195 48 W D C - Derate above 25C 1.56 0.39 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP13N50C FQPF13N50C Units R Thermal Resistance, Junction-to-Case, Max. 0.64 2.58 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 -- C/W JS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP13N50C / FQPF13N50C Rev. C0 FQP13N50C / FQPF13N50C N-Channel QFET MOSFET Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 50 units FQP13N50C F105 FQP13N50C TO-220 Tube N/A N/A FQPF13N50C F105 50 units FQPF13N50C TO-220F Tube N/A N/A o Electrical Characteristics T = 25 C unless otherwise noted. C Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 500 -- -- V DSS GS D BV Breakdown Voltage Temperature DSS I = 250 A, Referenced to 25C -- 0.5 -- V/C D / T Coefficient J I V = 500 V, V = 0 V -- -- 1 A DSS DS GS Zero Gate Voltage Drain Current V = 400 V, T = 125C -- -- 10 A DS C I Gate-Body Leakage Current, Forward V = 30 V, V = 0 V -- -- 100 nA GSSF GS DS I V = -30 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V V = V , I = 250 A Gate Threshold Voltage 2.0 -- 4.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10 V, I = 6.5 A -- 0.39 0.48 GS D On-Resistance g V = 40 V, I = 6.5 A Forward Transconductance -- 15 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 1580 2055 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 180 235 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 20 25 pF rss Switching Characteristics t Turn-On Delay Time -- 25 60 ns d(on) V = 250 V, I = 13 A, DD D t Turn-On Rise Time -- 100 210 ns r R = 25 G t Turn-Off Delay Time -- 130 270 ns d(off) (Note 4) t Turn-Off Fall Time -- 100 210 ns f Q Total Gate Charge -- 43 56 nC g V = 400 V, I = 13 A, DS D Q Gate-Source Charge -- 7.5 -- nC V = 10 V gs GS (Note 4) Q Gate-Drain Charge -- 18.5 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 13 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 52 A SM V V = 0 V, I = 13 A Drain-Source Diode Forward Voltage -- -- 1.4 V SD GS S t V = 0 V, I = 13 A, Reverse Recovery Time -- 410 -- ns rr GS S Q dI / dt = 100 A/ s Reverse Recovery Charge -- 4.5 -- C rr F 1. Repetitive rating : pulse-width limited by maximum junction temperature. o 2. L = 6 mH, I = 13 A, V = 50 V, R = 25 , starting T = 25 C. AS DD G J o 3. I 13 A, di/dt 200 A/s, V BV , starting T = 25 C. SD DD DSS J 4. Essentially independent of operating temperature. 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FQP13N50C / FQPF13N50C Rev. C0