X-On Electronics has gained recognition as a prominent supplier of FQP13N50C MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQP13N50C MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQP13N50C ON Semiconductor

FQP13N50C electronic component of ON Semiconductor
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Part No.FQP13N50C
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Fairchild Semiconductor MOSFET 500V N-Ch Q-FET advance C-Series
Datasheet: FQP13N50C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.1116
10 : USD 3.0436
30 : USD 2.9975
100 : USD 2.7804
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.254
10 : USD 1.8745
100 : USD 1.495
250 : USD 1.38
500 : USD 1.265
1000 : USD 1.0879
2000 : USD 1.0868
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 1.3214
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Forward Transconductance - Min
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Typical Turn-Off Delay Time
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We are delighted to provide the FQP13N50C from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQP13N50C and other electronic components in the MOSFETs category and beyond.

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FQP13N50C / FQPF13N50C N-Channel QFET MOSFET November 2013 FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, R = 480 m (Max.) V = 10 V, DS(on) GS transistors are produced using Fairchilds proprietary, I = 6.5 A D Low Gate Charge (Typ. 43 nC) planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- Low Crss (Typ. 20 pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D G G D G S D TO-220 S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP13N50C FQPF13N50C Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25C) Drain Current 13 13 * A D C - Continuous (T = 100C) 8 8 * A C I (Note 1) Drain Current - Pulsed 52 52 * A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 860 mJ AS I Avalanche Current (Note 1) 13 A AR E (Note 1) Repetitive Avalanche Energy 19.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 195 48 W D C - Derate above 25C 1.56 0.39 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP13N50C FQPF13N50C Units R Thermal Resistance, Junction-to-Case, Max. 0.64 2.58 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 -- C/W JS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP13N50C / FQPF13N50C Rev. C0 FQP13N50C / FQPF13N50C N-Channel QFET MOSFET Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 50 units FQP13N50C F105 FQP13N50C TO-220 Tube N/A N/A FQPF13N50C F105 50 units FQPF13N50C TO-220F Tube N/A N/A o Electrical Characteristics T = 25 C unless otherwise noted. C Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 500 -- -- V DSS GS D BV Breakdown Voltage Temperature DSS I = 250 A, Referenced to 25C -- 0.5 -- V/C D / T Coefficient J I V = 500 V, V = 0 V -- -- 1 A DSS DS GS Zero Gate Voltage Drain Current V = 400 V, T = 125C -- -- 10 A DS C I Gate-Body Leakage Current, Forward V = 30 V, V = 0 V -- -- 100 nA GSSF GS DS I V = -30 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V V = V , I = 250 A Gate Threshold Voltage 2.0 -- 4.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10 V, I = 6.5 A -- 0.39 0.48 GS D On-Resistance g V = 40 V, I = 6.5 A Forward Transconductance -- 15 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 1580 2055 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 180 235 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 20 25 pF rss Switching Characteristics t Turn-On Delay Time -- 25 60 ns d(on) V = 250 V, I = 13 A, DD D t Turn-On Rise Time -- 100 210 ns r R = 25 G t Turn-Off Delay Time -- 130 270 ns d(off) (Note 4) t Turn-Off Fall Time -- 100 210 ns f Q Total Gate Charge -- 43 56 nC g V = 400 V, I = 13 A, DS D Q Gate-Source Charge -- 7.5 -- nC V = 10 V gs GS (Note 4) Q Gate-Drain Charge -- 18.5 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 13 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 52 A SM V V = 0 V, I = 13 A Drain-Source Diode Forward Voltage -- -- 1.4 V SD GS S t V = 0 V, I = 13 A, Reverse Recovery Time -- 410 -- ns rr GS S Q dI / dt = 100 A/ s Reverse Recovery Charge -- 4.5 -- C rr F 1. Repetitive rating : pulse-width limited by maximum junction temperature. o 2. L = 6 mH, I = 13 A, V = 50 V, R = 25 , starting T = 25 C. AS DD G J o 3. I 13 A, di/dt 200 A/s, V BV , starting T = 25 C. SD DD DSS J 4. Essentially independent of operating temperature. 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FQP13N50C / FQPF13N50C Rev. C0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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