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FQPF16N25C N-Channel QFET MOSFET
November 2013
FQPF16N25C
N-Channel QFET MOSFET
250 V, 15.6 A, 270 m
Features Description
15.6 A, 250 V, R = 270 m (Max) @ V = 10 V, This N-Channel enhancement mode power MOSFET is pro-
DS(on) GS
I = 7.8 A duced using Fairchild Semiconductors proprietary planar stripe
D
and DMOS technology. This advanced MOSFET technology
Low Gate Charge (Typ. 41 nC)
has been especially tailored to reduce on-state resistance, and
Low Crss (Typ. 68 pF)
to provide superior switching performance and high avalanche
100% Avalanche Tested
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
D
G
G
D
S
TO-220F
S
o
MOSFET Maximum Ratings T = 25 C unless otherwise noted.
C
Symbol Parameter FQPF16N25C Unit
V
V Drain to Source Voltage 250
DSS
o
A
- Continuous (T = 25 C) 15.6 *
C
I Drain Current
D
o
A
- Continuous (T = 100 C) 9.8 *
C
A
I Drain Current - Pulsed (Note 1) 62.4 *
DM
V
V Gate to Source Voltage 30
GSS
mJ
E Single Pulsed Avalanche Energy (Note 2) 410
AS
A
I Avalanche Current (Note 1) 15.6
AR
mJ
E Repetitive Avalanche Energy (Note 1) 13.9
AR
V/ns
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5
o
W
(T = 25 C) 43
C
P Power Dissipation
D
o
W/C
- Derate Above 25C0.34
C
T , T Operating and Storage Temperature Range -55 to +150
J STG
Maximum Lead Temperature for Soldering,
C
T 300
L
1/8 from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter FQPF16N25C Unit
2.89 C/W
R Thermal Resistance, Junction to Case, Max
JC
R Thermal Resistance, Junction to Ambient, Max 62.5 C/W
JA
2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
1
FQPF16N25C Rev. C1