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V = -10 V, DS(on) GS produced using Fairchild Semiconductor s proprietary I = - 8.25 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 30 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching Low Crss (Typ. 100 pF) performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching 175 C Maximum Junction Temperature Rating power applications. D G G D TO-220 S S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQP17P10 Unit V Drain-Source Voltage -100 V DSS I - Continuous (T = 25C) Drain Current -16.5 A D C - Continuous (T = 100C) -11.7 A C I (Note 1) Drain Current - Pulsed -66 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 580 mJ AS I Avalanche Current (Note 1) -16.5 A AR E (Note 1) Repetitive Avalanche Energy 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns P Power Dissipation (T = 25C) 100 W D C - Derate above 25C 0.67 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQP17P10 Unit R Thermal Resistance, Junction-to-Case, Max. 1.5 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2002 Fairchild Semiconductor Corporation 1 ww.fairchildsemi.com FQP17P10 Rev.C0