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V = -10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = -1.4 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 6 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ 7.5 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S G G D S TO-220 D Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP3P20 Unit V Drain-Source Voltage -200 V DSS I Drain Current - Continuous (T = 25C) -2.8 A D C - Continuous (T = 100C) -1.77 A C I Drain Current - Pulsed (Note 1) -11.2 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 150 mJ AS I (Note 1) Avalanche Current -2.8 A AR E Repetitive Avalanche Energy (Note 1) 5.2 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt -5.5 V/ns P Power Dissipation (T = 25C) 52 W D C - Derate above 25C 0.42 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics FQP3P20 + 6 Thermal Resistance, Junction-to-Case, Max. 2.4 + Thermal Resistance, Junction-to-Ambient, Max. - & 6 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP3P20 Rev. C0