The FQP50N06 is an N-channel, enhancement mode MOSFET that is available in a TO-220 package manufactured by ON Semiconductor and is suitable for a variety of applications in medium voltage and high current switching and amplifier circuits. With a breakdown voltage of 60 Volts, drain to source voltage of 60 Volts and a drain current of 50 Amps, the FQP50N06’s properties make it an ideal choice for many applications ranging from switching power supplies, motor control circuits, and low side switching to amplifier circuits, and power switching devices. The FQP50N06 also features excellent gate charge characteristics, making it highly efficient for power supply applications. Additionally, it is ideal for low noise amplifier applications due to its low RDSon figure of 0.8 ohms, making it a highly effective device for such applications.