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V = 10 V, DS(on) GS transistors are produced using Fairchilds proprietary, planar I = 6 A D stripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC) been especially tailored to minimize on-state resistance, Low Crss (Typ. 21 pF) provide superior switching performance, and withstand high 100% Avalanche Tested energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G G D TO-220F S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQPF12N60C / FQPF12N60CT Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25 C) 12* A D C - Continuous (T = 100 C) 7.4* A C (Note 1) I Drain Current - Pulsed A DM 48* V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 870 mJ AS (Note 1) I Avalanche Current 12 A AR (Note 1) E Repetitive Avalanche Energy 22.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25 C) 51 W D C - Derate above 25 C 0.41 W/ C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQPF12N60C / FQPF12N60CT Unit R Thermal Resistance, Junction-to-Case, Max. 2.43 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. C/W 62.5 JA www.fairchildsemi.com 2003 Fairchild Semiconductor Corporation 1 FQPF12N60C Rev C0