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V = 10 V, DS(on) GS transistors are produced using Fairchilds proprietary, I = 1.15 A D Low Gate Charge (Typ. 4.0 nC) planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- Low Crss (Typ. 4.7 pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. D G G D S TO-220F S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQPF3N25 Unit V Drain-Source Voltage 250 V DSS I Drain Current - Continuous (T = 25C) 2.3 A D C - Continuous (T = 100C) 1.45 A C I Drain Current - Pulsed (Note 1) 9.2 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 40 mJ AS I (Note 1) Avalanche Current 2.3 A AR E Repetitive Avalanche Energy (Note 1) 2.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25C) 27 W D C - Derate above 25C 0.22 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQPF3N25 Unit R Thermal Resistance, Junction-to-Case, Max. 4.63 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF3N25 Rev. C0