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V = -10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = -1.7 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 10 nC) MOSFET technology has been especially tailored to reduce Low C (Typ. 12 pF) on-state resistance, and to provide superior switching rss performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S G D G G TO-220F D S S TO-220F LG-formed D Absolute Maximum Ratings T = 25C unless otherwise noted. C FQPF5P20 Symbol Parameter Unit FQPF5P20RDTU V Drain-Source Voltage -200 V DSS I - Continuous (T = 25C) Drain Current -3.4 A D C - Continuous (T = 100C) -2.15 A C I (Note 1) Drain Current - Pulsed -13.6 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 330 mJ AS I Avalanche Current (Note 1) -3.4 A AR E (Note 1) Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25C) 38 W D C - Derate Above 25C 0.3 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds. Thermal Characteristics FQPF5P20 Symbol Parameter Unit FQPF5P20RDTU R Thermal Resistance, Junction-to-Case, Max. 3.29 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 62.5 JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF5P20 Rev. C1