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V = 10 V, DS GS produced using Fairchild Semiconductors proprietary I = 2.2 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 29 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching Low C (Typ. 16 pF) rss performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-220F S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQPF7N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25C) 4.3 A D C - Continuous (T = 100C) 2.7 A C I Drain Current - Pulsed (Note 1) 17.2 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 580 mJ AS I (Note 1) Avalanche Current 4.3 A AR E Repetitive Avalanche Energy (Note 1) 4.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 48 W D C - Derate above 25C 0.38 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 seconds Thermal Characteristics Symbol Parameter FQPF7N60 Unit R Thermal Resistance, Junction-to-Case, Max. 2.60 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF7N60 Rev. C1