X-On Electronics has gained recognition as a prominent supplier of FQPF7N65CYDTU MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQPF7N65CYDTU MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQPF7N65CYDTU ON Semiconductor

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Part No.FQPF7N65CYDTU
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 650V N-Ch Advance Q-FET C-Series
Datasheet: FQPF7N65CYDTU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7231 ea
Line Total: USD 0.72 
Availability - 149
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
149
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7231

710
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.166
10 : USD 1.0285
100 : USD 0.9988
800 : USD 0.7931
2400 : USD 0.7469
10400 : USD 0.7293

   
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Pd - Power Dissipation
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Continuous Drain Current
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We are delighted to provide the FQPF7N65CYDTU from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQPF7N65CYDTU and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQPF7N65C N-Channel QFET MOSFET August 2013 FQPF7N65C N-Channel QFET MOSFET 650 V, 7 A, 1.4 Description Features This N-Channel enhancement mode power MOSFET is 7 A, 6 50 V, R = 1. 4 (Max.) V = 10 V, I = 3.5 A D DS(on). GS produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 2 8 nC) planar stripe and DMOS technology. This advanced Low C (Typ. 1 2 pF) MOSFET technology has been especially tailored to rss reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G G TO-220F TO-220F S G D S Y-formed S Absolute Maximum Ratings T = 25C unless otherwise noted C FQPF7N65C / F QPF7N65CYDTU Symbol Parameter Unit V Drain-Source Voltage 650 V DSS I - Continuous (T = 25C) Drain Current A D C 7 * - Continuous (T = 100C) A C 4.2 * I (Note 1) Drain Current - Pulsed 28 * A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 212 mJ AS I Avalanche Current (Note 1) 7 A AR E (Note 1) Repetitive Avalanche Energy 1.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) W D C 52 - Derate above 25C W/C 0.42 T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQPF7N65C / F QPF7N65CYDTU Unit R Thermal Resistance, Junction-to-Case, Max. C/W JC 2.4 R Thermal Resistance, Junction-to-Ambient, Max. C/W 62.5 JA www.fairchildsemi.com 200 4 Fairchild Semiconductor Corporation FQPF 7N65C Rev. C1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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