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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQPF9P25 P-Channel QFET MOSFET November 2013 FQPF9P25 P-Channel QFET MOSFET -250 V, -6 A, 620 m Description Features This P-Channel enhancement mode power MOSFET is -6 A, -250 V, R = 620 m (Max.) V = -10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = -3 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 29 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 27 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S G G D S TO-220F D Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP F9P25 Unit V Drain-Source Voltage -250 V DSS I - Continuous (T = 25C) Drain Current -6.0 A D C - Continuous (T = 100C) -3.9 A C I (Note 1) Drain Current - Pulsed -24 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 650 mJ AS I Avalanche Current (Note 1) -6.0 A AR E (Note 1) Repetitive Avalanche Energy 5.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25C) 50 W D C - Derate above 25C 0.4 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds. Thermal Characteristics FQPF9P25 + Thermal Resistance, Junction-to-Case, Max. 2.5 6 + - & 6 Thermal Resistance, Junction-to-Ambient, Max. 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF9P25 Rev. C0