X-On Electronics has gained recognition as a prominent supplier of PD57060-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD57060-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD57060-E STMicroelectronics

Name: PD57060-E
Brand: STMicroelectronics
SKU: PD57060E_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD57060-E electronic component of STMicroelectronics

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Part No.	PD57060-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
Datasheet:	PD57060-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 46.5494 ea
Line Total: USD 46.55

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

PD57060-E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 400 Multiples : 1	400 : USD 66.3099 500 : USD 65.7057 1000 : USD 65.089 2000 : USD 64.4847 2500 : USD 63.868 3000 : USD 63.2512 4000 : USD 62.6344 5000 : USD 62.0177 10000 : USD 61.4008 20000 : USD 60.7841

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 69.6516 5 : USD 65.4939 10 : USD 61.4499 50 : USD 56.6004

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 51.7411 4 : USD 49.8248 15 : USD 47.9085 30 : USD 47.9085 75 : USD 47.9085

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 400 Multiples : 400	400 : USD 53.2096

0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 1 Multiples : 1	1 : USD 46.5494 10 : USD 43.4191 25 : USD 41.6084 100 : USD 36.4074 250 : USD 35.1071 500 : USD 34.587 1000 : USD 33.2867 2500 : USD 32.2466

0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 1 Multiples : 1	1 : USD 55.4706

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 400 Multiples : 400	400 : USD 42.0236

Specifications

Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
Output Power 60 W 60 W
Kind Of Package TUBE TUBE
Case So10rf So10rf
Polarisation Unipolar Unipolar
Electrical Mounting Smt Smt
Kind Of Transistor Rf Rf
Kind Of Channel Enhanced Enhanced
Type Of Transistor N - Mosfet N - Mosfet
Open-Loop Gain 14.3Db 14.3Db
Drain-Source Voltage 65 V 65 V
Drain Current 7 A 7 A
Gate-Source Voltage 20 V 20 V
Efficiency 54 % 54 %
Frequency 945 MHz 945 MHz
Power Dissipation 79 W 79 W

We are delighted to provide the PD57060-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD57060-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 60 W with 14.3dB gain 945 MHz/28 V OUT New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PowerSO-10RF Devices superior linearity performance makes it (straight lead) an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been Figure 1. Pin connection specially optmized for RF needs and offers Source excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Drain Gate Table 1. Device summary Order code Package Packing PD57060-E PowerSO-10RF (formed lead) Tube PD57060S-E PowerSO-10RF (straight lead) Tube PD57060TR-E PowerSO-10RF (formed lead) Tape and reel PD57060STR-E PowerSO-10RF (straight lead) Tape and reel June 2010 Doc ID 11758 Rev 4 1/21 www.st.com 21Contents PD57060-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedances 5 4 Typical performance . 6 5 Test circuit . 9 6 Common source s-parameter 12 7 Package mechanical data 15 8 Revision history . 20 2/21 Doc ID 11758 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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