X-On Electronics has gained recognition as a prominent supplier of PD84006-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD84006-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD84006-E STMicroelectronics

PD84006-E electronic component of STMicroelectronics
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Part No.PD84006-E
Manufacturer: STMicroelectronics
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic
Datasheet: PD84006-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 16.0439
10 : USD 14.7503
25 : USD 14.1386
100 : USD 12.4641
400 : USD 11.5315
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PD84006-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD84006-E and other electronic components in the RF MOSFET Transistors category and beyond.

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PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration Broadband performances: P = 6 W with 13 OUT dB gain 870 MHz Plastic package ESD protection In compliance with the 2002/95/EC European directive PowerSO-10RF (formed lead) Description The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It Figure 1. Pin connections operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent Source gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF s superior linearity performance makes it an ideal solution for portable radio and UHF RFID reader. The Drain Gate PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Table 1. Device summary Order code Package Packaging PD84006-E PowerSO-10RF (formed lead) Tube May 2012 Doc ID 16087 Rev 2 1/11 This is information on a product in full production. www.st.com 11Contents PD84006-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 3 Typical performances 5 4 Package mechanical data . 6 5 Revision history . 10 2/11 Doc ID 16087 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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