PD84006-E STMicroelectronics

PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration Broadband performances: P = 6 W with 13 OUT dB gain 870 MHz Plastic package ESD protection In compliance with the 2002/95/EC European directive PowerSO-10RF (formed lead) Description The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It Figure 1. Pin connections operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent Source gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF s superior linearity performance makes it an ideal solution for portable radio and UHF RFID reader. The Drain Gate PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Table 1. Device summary Order code Package Packaging PD84006-E PowerSO-10RF (formed lead) Tube May 2012 Doc ID 16087 Rev 2 1/11 This is information on a product in full production. www.st.com 11Contents PD84006-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 3 Typical performances 5 4 Package mechanical data . 6 5 Revision history . 10 2/11 Doc ID 16087 Rev 2