BG 3130 H6327 Infineon

BG3130... DUAL N-Channel MOSFET Tetrode Two gain controlled input stage for UHF 4 and VHF -tuners e.g. (NTSC, PAL) 5 3 6 2 1 Two AGC amplifiers in one single package Integrated gate protection diodes High AGC-range, low noise figure, high gain Improved cross modulation at gain reduction Pb-free (RoHS compliant) package Qualified according AEC Q101 BG3130 BG3130R Drain RF Output G2 + DC AGC G1 RF Input RG1 GND VGG ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Pin Configuration Marking BG3130 SOT363 1=G1* 2=G2 3=D* 4=D** 5=S 6=G1** KAs BG3130R SOT363 1=G1* 2=S 3=D* 4=D** 5=G2 6=G1** KHs * For amp. A ** for amp. B 180 rotated tape loading orientation available 1 2007-06-01BG3130... Maximum Ratings Parameter Symbol Value Unit 8 V Drain-source voltage V DS 25 mA Continuous drain current I D 1 Gate 1/ gate 2-source current I G1/2SM 6 V Gate 1/ gate 2-source voltage V G1/G2S 200 mW Total power dissipation P tot C Storage temperature T -55 ... 150 stg 150 Channel temperature T ch Thermal Resistance Parameter Symbol Value Unit 1) K/W Channel - soldering point R 280 thchs 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-06-01