ARF475FL 500 V, 900 W, 128 MHz RF Power MOSFET Product Overview The ARF475FL is a matched pair of RF power transistors in a common source configuration in a T3A package. It is designed for high-voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 128 MHz. Features Specified 500 V, 128 MHz characteristics: Output power = 900 W peak Gain = 15 dB (Class AB) Efficiency = 50% minimum High-performance push-pull RF package High-voltage breakdown and large SOA for superior ruggedness Low thermal resistance RoHS compliant Datasheet DS00004435A-page 1 2022 Microchip Technology Inc. and its subsidiaries ARF475FL Device Specifications 1. Device Specifications This section shows the specifications of the ARF475FL device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the ARF475FL device. T = 25 C unless otherwise C specified. Table 1-1. Absolute Maximum Ratings Symbol Parameter Ratings Unit V Drain-source voltage 500 V DSS V Drain-gate voltage 500 DGO I Continuous drain current 10 A D V Gate-source voltage 30 V GS P Total power dissipation (per side) 910 W D T , T Operating and storage junction temperature range 55 to 175 C J STG T Lead temperature: 0.063 from case for 10 seconds 300 L 1.2 Electrical Performance The following table shows the static characteristics of the ARF475FL device. T = 25 C unless otherwise specified. C Table 1-2. Static Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Drain-source breakdown voltage V = 0 V, I = 250 A 500 V (BR)DSS GS D 1 V On-state drain voltage I = 5 A, V = 10 V 2.9 4 DS(ON) D(ON) GS I Zero-gate voltage drain current V = V , V = 0 V 100 A DSS DS DSS GS V = 50 V, V = 0 V, T = 500 DS GS C 125 C I Gate-source leakage current V = 30 V, V = 0 V 100 nA GSS GS DS g Forward transconductance V = 15 V, I = 5 A 4.2 5.1 S fs DS D g /g Forward transconductance match V = 15 V, I = 5 A 0.9 1.1 S fs1 fs2 DS D ratio V Gate-source threshold voltage V = V , I = 200 mA 2 3.3 4 V GS(th) DS GS D DV Gate threshold voltage match V = V , I = 200 mA 0.2 V GS(th) DS GS D Note: 1. Pulse test: Pulse width < 380 s, Duty Cycle < 2%. The following table shows the thermal characteristics of the ARF475FL device. DS00004435A-page 2 Datasheet 2022 Microchip Technology Inc. and its subsidiaries