ARF521 165V, 150W, 150MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power ampli ers up to 150MHz. High Voltage Breakdown and Large SOA Speci ed 125 Volt, 81MHz Characteristics: for Superior Ruggedness. Output Power = 150 Watts. Gain = 13dB (Class AB) Industry Standard Package Ef ciency = 50% Low Vth Thermal Coef cient Maximum Ratings All Ratings: T =25C unless otherwise speci ed C Symbol Parameter ARF521 Unit V Drain-Source Voltage 500 V DSS I Continuous Drain Current T = 25C 10 A D C V Gate-Source Voltage 30 V GS P D Total Device Dissipation T = 25C 250 W C T , T Operating and Storage Junction Temperature Range -55 to 175 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 500 V (BR)DSS GS D 1 V DS(ON) Drain-Source On-State Resistance (I = 5A, V = 10V) 0.56 0.8 D(ON) GS Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 50V, V = 0, T = 125C) 250 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS DS DS g Forward Transconductance (V = 15V, I = 5A) 3 3.6 mhos fs DS D V Gate Threshold Voltage (V = V , I = 200mA) 2 4 Volts GS(TH) DS GS D Thermal Characteristics Symbol Characteristic Min Typ Max Unit Junction to Case Thermal Resistance 0.60 R JC C/W Case to Sink (Use High Ef ciency Thermal Joint Compound and Planar Heat Sink Surface.) 0.1 R CS CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics ARF521 Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 780 900 ISS GS C Output Capacitance V = 50V 125 150 pF oss DS C Reverse Transfer Capacitance f = 1MHz 7 10 rss t d(ON) Turn-on Delay Time 5.1 10 V = 15V GS t r Rise Time 4.1 8 V = 0.5V DD DSS ns t I =I 25C Turn-off Delay Time 12 18 d(off) D D Cont. R = 1.6W t G f Fall Time 4.0 7 Functional Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit G PS Common Source Ampli er Power Gain 14 15 dB f = 81MHz h Drain Ef ciency I = 50mA V = 125V 50 55 % dq DD y P = 150W Electrical Ruggedness VSWR 5:1 No Degradation in Output Power OUT 1. Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 25 3000 Class AB V = 125V C DD iss 1000 P = 150W out 500 C oss 20 100 50 C 15 rss 10 10 1 0 25 50 75 100 125 150 .1 1 10 100 200 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FREQUENCY (MHz) DS Figure 1, Typical Gain vs. Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 30 40 V > I (ON) x R (ON)MAX. OPERATION HERE DS D DS LIMITED BY R (ON) 250 SEC. PULSE TEST DS <0.5 % DUTY CYCLE 25 100us 10 T = -55C J 20 5 T = +25C J 15 1ms 1 10ms 10 100ms .5 DC T = -55C J T =+25C 5 C T =+175C T = +125C J J SINGLE PULSE 0 .1 0 2 4 6 8 10 1 5 10 50 100 500 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V , GATE-TO-SOURCE VOLTAGE (VOLTS) DS GS Figure 4, Typical Maximum Safe Operating Area Figure 3, Typical Transfer Characteristics 050-4930 Rev B 8-2007 I , DRAIN CURRENT (AMPERES) GAIN (dB) D CAPACITANCE (pf) I , DRAIN CURRENT (AMPERES) D