X-On Electronics has gained recognition as a prominent supplier of ARF477FL RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. ARF477FL RF MOSFET Transistors are a product manufactured by Microchip. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

ARF477FL Microchip

ARF477FL electronic component of Microchip
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Part No.ARF477FL
Manufacturer: Microchip
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors FG, MOSFET, 500V, T3-modified
Datasheet: ARF477FL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 138.9545 ea
Line Total: USD 138.95 
Availability - 27
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
27
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 138.9545
10 : USD 136.206

   
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We are delighted to provide the ARF477FL from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ARF477FL and other electronic components in the RF MOSFET Transistors category and beyond.

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Common Source ARF477FL ARF477FL Push-Pull Pair S S G D ARF477FL G D S S RF POWER MOSFET N- CHANNEL PUSH - PULL PAIR 165V 400W 100MHz The ARF477FL is a matched pair of RF power transistors in a common source con guration. It is designed for high voltage push-pull or parallel operation in ISM and MRI power ampli ers up to 100 MHz. Speci ed 150 Volt, 65 MHz Characteristics: High Performance Push-Pull RF Package. High Voltage Breakdown and Large SOA Output Power = 400 Watts for Superior Ruggedness. Gain = 15dB (Class AB) Low Thermal Resistance. Ef ciency = 50% min RoHS Compliant MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter Ratings Unit V Drain-Source Voltage 500 DSS V V DGO Drain-Gate Voltage 500 I D Continuous Drain Current @ T = 25C (each device) 15 A C V Gate-Source Voltage 30 V GS P Total Power Dissipation @ T = 25C 750 W D C T , T J STG Operating and Storage Junction Temperature Range -55 to 175 C T L Lead Temperature: 0.063 from Case for 10 Sec. 300 Static Electrical Characteristics Symbol Parameter Min Typ Max Unit BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 500 DSS GS D V 1 V On State Drain Voltage (I = 7.5A, V = 10V) 2.9 4 DS(ON) D(ON) GS Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 50V , V = 0, T = 125C) 250 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS GS DS g Forward Transconductance (V = 15V, I = 7.5A) 3.5 5.6 8 mhos fs DS D g /g Forward Transconductance Match Ratio (V = 15V, I = 5A) 0.9 1.1 fs1 fa2 DS D V Gate Threshold Voltage (V = V , I = 50mA) 35 GS(TH) DS GS D V Gate Threshold Voltage Match (V = V , I = 50mA) 0.2 Volts GS(TH) DS GS D Thermal Characteristics Symbol Parameter Min Typ Max Unit R Junction to Case 0.18 0.2 JC C/W R JHS Junction to Sink (High Ef ciency Thermal Joint Compound and Planar Heat Sink Surface.) 0.30 0.32 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS (per section) ARF477FL Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 1200 1400 ISS GS C Output Capacitance 150 180 pF oss V = 150V DS C f = 1MHz Reverse Transfer Capacitance 60 75 rss t Turn-on Delay Time 7 d(on) V = 15V GS t Rise Time 6 V = 250V r DD nS I = I @ 25C t D D[Cont.] Turn-off Delay Time 20 d(off) R = 1.6 t G Fall Time 4.0 7 f Functional Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit G PS Common Source Ampli er Power Gain 14 16 dB f = 65MHz Drain Ef ciency I = 0mA V = 150V 50 55 % dq DD P = 400W Electrical Ruggedness VSWR 10:1 No Degradation in Output Power OUT 1. Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 25 5000 9V V =15 & 10V GS C iss 20 1000 8V C 500 oss 15 C rss 7V 10 100 6.5V 6V 50 5 5.5V 5V 4.5V 0 10 0 5 10 15 20 25 30 .1 .5 1 5 10 50 150 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS DS Figure 1, Typical Output Characteristics Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 56.00 16 T = -55C J OPERATION HERE LIMITED BY R (ON) DS V > I (ON) x R (ON)MAX. DS D DS 250 SEC. PULSE TEST 12 10.00 @ <0.5 % DUTY CYCLE 8 1.00 4 T = +125C T = -55C J T =+25C J C T =+150C J T = +25C SINGLE PULSE J 0 0.10 1 5 10 50 100 500 2 4 6 8 10 V , GATE-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area 050-4952 C 6-2014 I , DRAIN CURRENT (AMPERES) I , DRAIN CURRENT (AMPERES) D D I , DRAIN CURRENT (AMPERES) CAPACITANCE (pf) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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