Common Source ARF477FL
ARF477FL
Push-Pull Pair
S
S
G D
ARF477FL
G
D
S
S
RF POWER MOSFET
N- CHANNEL PUSH - PULL PAIR 165V 400W 100MHz
The ARF477FL is a matched pair of RF power transistors in a common source con guration. It is designed for high
voltage push-pull or parallel operation in ISM and MRI power ampli ers up to 100 MHz.
Speci ed 150 Volt, 65 MHz Characteristics: High Performance Push-Pull RF Package.
High Voltage Breakdown and Large SOA
Output Power = 400 Watts
for Superior Ruggedness.
Gain = 15dB (Class AB)
Low Thermal Resistance.
Ef ciency = 50% min
RoHS Compliant
MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed.
C
Symbol Parameter Ratings Unit
V
Drain-Source Voltage 500
DSS
V
V
DGO Drain-Gate Voltage 500
I
D Continuous Drain Current @ T = 25C (each device) 15 A
C
V
Gate-Source Voltage 30 V
GS
P
Total Power Dissipation @ T = 25C 750 W
D
C
T , T
J STG Operating and Storage Junction Temperature Range -55 to 175
C
T
L Lead Temperature: 0.063 from Case for 10 Sec. 300
Static Electrical Characteristics
Symbol Parameter Min Typ Max Unit
BV
Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 500
DSS
GS D
V
1
V
On State Drain Voltage (I = 7.5A, V = 10V) 2.9 4
DS(ON)
D(ON) GS
Zero Gate Voltage Drain Current (V = V , V = 0V) 25
DS DSS GS
I A
DSS
Zero Gate Voltage Drain Current (V = 50V , V = 0, T = 125C) 250
DS DSS GS C
I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA
GSS GS DS
g Forward Transconductance (V = 15V, I = 7.5A) 3.5 5.6 8 mhos
fs DS D
g /g Forward Transconductance Match Ratio (V = 15V, I = 5A) 0.9 1.1
fs1 fa2 DS D
V Gate Threshold Voltage (V = V , I = 50mA) 35
GS(TH) DS GS D
V Gate Threshold Voltage Match (V = V , I = 50mA) 0.2 Volts
GS(TH) DS GS D
Thermal Characteristics
Symbol Parameter Min Typ Max Unit
R
Junction to Case 0.18 0.2
JC
C/W
R
JHS Junction to Sink (High Ef ciency Thermal Joint Compound and Planar Heat Sink Surface.) 0.30 0.32
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - DYNAMIC CHARACTERISTICS (per section) ARF477FL
Symbol Parameter Test Conditions Min Typ Max Unit
C
Input Capacitance V = 0V 1200 1400
ISS
GS
C
Output Capacitance 150 180 pF
oss V = 150V
DS
C f = 1MHz
Reverse Transfer Capacitance 60 75
rss
t
Turn-on Delay Time 7
d(on)
V = 15V
GS
t
Rise Time 6
V = 250V
r
DD
nS
I = I @ 25C
t D D[Cont.]
Turn-off Delay Time 20
d(off)
R = 1.6
t G
Fall Time 4.0 7
f
Functional Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
G
PS Common Source Ampli er Power Gain 14 16 dB
f = 65MHz
Drain Ef ciency I = 0mA V = 150V 50 55 %
dq DD
P = 400W
Electrical Ruggedness VSWR 10:1 No Degradation in Output Power
OUT
1. Pulse Test: Pulse width < 380 S, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the speci cations and information contained herein.
25 5000
9V
V =15 & 10V
GS
C
iss
20
1000
8V
C
500 oss
15
C
rss
7V
10
100
6.5V
6V 50
5
5.5V
5V
4.5V
0 10
0 5 10 15 20 25 30 .1 .5 1 5 10 50 150
V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS DS
Figure 1, Typical Output Characteristics Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
56.00
16
T = -55C
J
OPERATION HERE
LIMITED BY R (ON)
DS
V > I (ON) x R (ON)MAX.
DS D DS
250 SEC. PULSE TEST
12
10.00
@ <0.5 % DUTY CYCLE
8
1.00
4
T = +125C
T = -55C
J T =+25C
J
C
T =+150C
J
T = +25C
SINGLE PULSE
J
0 0.10
1 5 10 50 100 500
2 4 6 8 10
V , GATE-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS DS
Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area
050-4952 C 6-2014
I , DRAIN CURRENT (AMPERES) I , DRAIN CURRENT (AMPERES)
D D
I , DRAIN CURRENT (AMPERES) CAPACITANCE (pf)
D