Document Number: MRF1550N Freescale Semiconductor Rev. 15, 6/2009 Technical Data RF Power Field Effect Transistors MRF1550NT1 N-Channel Enhancement-Mode Lateral MOSFETs MRF1550FNT1 Designed for broadband commercial and industrial applications with frequen- cies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. 175 MHz, 50 W, 12.5 V Specified Performance 175 MHz, 12.5 Volts LATERAL N-CHANNEL Output Power 50 Watts BROADBAND Power Gain 14.5 dB RF POWER MOSFETs Efficiency 55% Capable of Handling 20:1 VSWR, 15.6 Vdc, 175 MHz, 2 dB Overdrive Features Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Broadband-Full Power Across the Band: 135-175 MHz 200 C Capable Plastic Package CASE 1264-10, STYLE 1 N Suffix Indicates Lead-Free Terminations. RoHS Compliant. TO-272-6 WRAP PLASTIC In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1550NT1 CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC MRF1550FNT1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +40 Vdc DSS Gate-Source Voltage V 20 Vdc GS Drain Current Continuous I 12 Adc D (1) Total Device Dissipation T = 25C P 165 W C D Derate above 25C 0.50 W/C Storage Temperature Range T - 65 to +150 C stg Operating Junction Temperature T 200 C J Table 2. Thermal Characteristics (2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 0.75 C/W JC Table 3. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C T T J C 1. Calculated based on the formula P = D R JC 2. MTTF calculator available at Table 4. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Current I 1 Adc DSS (V = 60 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 0.5 Adc GSS (V = 10 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1 3 Vdc GS(th) (V = 12.5 Vdc, I = 800 A) DS D Drain-Source On-Voltage R 0.5 DS(on) (V = 5 Vdc, I = 1.2 A) GS D Drain-Source On-Voltage V 1 Vdc DS(on) (V = 10 Vdc, I = 4.0 Adc) GS D Dynamic Characteristics Input Capacitance (Includes Input Matching Capacitance) C 500 pF iss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS Output Capacitance C 250 pF oss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS Reverse Transfer Capacitance C 35 pF rss (V = 12.5 Vdc, V = 0 V, f = 1 MHz) DS GS RF Characteristics (In Freescale Test Fixture) Common-Source Amplifier Power Gain G 14.5 dB ps (V = 12.5 Vdc, P = 50 Watts, I = 500 mA) f = 175 MHz DD out DQ Drain Efficiency 55 % (V = 12.5 Vdc, P = 50 Watts, I = 500 mA) f = 175 MHz DD out DQ MRF1550NT1 MRF1550FNT1 RF Device Data Freescale Semiconductor 2