X-On Electronics has gained recognition as a prominent supplier of MRF6S20010NR1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF6S20010NR1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF6S20010NR1 NXP

MRF6S20010NR1 electronic component of NXP
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Part No.MRF6S20010NR1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R
Datasheet: MRF6S20010NR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 30.3457 ea
Line Total: USD 30.35 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the MRF6S20010NR1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF6S20010NR1 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF6S20010N FreescaleSemiconductor Rev. 4, 1/2014 Technical Data RFPowerFieldEffectTransistors MRF6S20010NR1 N--Channel Enhancement--ModeLateral MOSFETs MRF6S20010GNR1 DesignedforClassAorClassABgeneralpurposeapplicationswith frequenciesfrom1600to2200MHz.Suitableforanaloganddigitalmodulation and multipurpose amplifier applications. Typical Two--Tone Performance 2170 MHz: V =28Volts,I = DD DQ 1600--2200MHz,10W,28V 130 mA, P = 10Watts PEP out GSM,GSMEDGE Power Gain 15.5 dB SINGLEN--CDMA Drain Efficiency 36% 2xW--CDMA IMD --34dBc LATERALN--CHANNEL Typical 2--Carrier W--CDMA Performance: V =28Volts,I = 130 mA, DD DQ RFPOWERMOSFETs P = 1 Watt Avg., Full Frequency Band (2130--2170 MHz), Channel out Bandwidth= 3.84MHz. PAR = 8.5dB 0.01% Probability Power Gain 15.5 dB Drain Efficiency 15% IM3 10MHz Offset --47dBc in3.84MHz Channel Bandwidth ACPR 5MHz Offset --49dBc in3.84MHz Channel Bandwidth Typical Single--Carrier N--CDMA Performance: V =28Volts,I = DD DQ TO--270--2 130 mA, P = 1 Watt Avg., Full Frequency Band (1930--1990 MHz), out PLASTIC IS--95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel MRF6S20010NR1 Bandwidth= 1.2288MHz. PAR = 9.8dB 0.01%Probability onCCDF. Power Gain 15.5 dB Drain Efficiency 16% ACPR 885kHz Offset = --60dBc in30kHz Bandwidth Typical GSM EDGE Performance: V =28Volts,I = 130 mA, P = DD DQ out 4 Watts Avg., Full Frequency Band (1805--1880 MHz) TO--270G--2 Power Gain 16 dB PLASTIC Drain Efficiency 33% MRF6S20010GNR1 EVM 1.3%rms Capableof Handling5:1VSWR, 28Vdc, 2000MHz, 10Watts CW Output Power Features CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters Internally Matchedfor Easeof Use RF /V21 in GS RF /V Qualified Up to a Maximum of 32 V Operation out DS DD IntegratedESD Protection 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel. (Top View) Note: The backside of the package is the source terminalforthe transistor. Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +68 Vdc DSS Gate--Source Voltage V --0.5, +12 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 78C, 1 W CW 2.3 Case Temperature 79C, 10W PEP, Two--ToneTest 2.9 Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1A Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =68Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 500 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.5 2.2 3.5 Vdc GS(th) (V =10Vdc,I =40 Adc) DS D Gate Quiescent Voltage V 2 2.8 4 Vdc GS(Q) (V =28Vdc,I =130 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.33 0.4 Vdc DS(on) (V =10Vdc,I =0.4Adc) GS D (3) DynamicCharacteristics Output Capacitance C 20 pF oss (V =28Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Reverse TransferCapacitance C 11.6 pF rss (V =28Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 120 pF iss (V =28Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS (4) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =130mA, P =10W PEP,f1=2170MHz, DD DQ out f2=2170.1MHz, Two--ToneTest PowerGain G 14 15.5 17 dB ps Drain Efficiency 33 36 % D Intermodulation Distortion IMD --34 --28 dBc Input Return Loss IRL --15 --9 dB 1. MTTFcalculatoravailable at

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