DocumentNumber:MRF6V12250H FreescaleSemiconductor Rev. 2, 4/2010 TechnicalData RFPowerFieldEffectTransistors MRF6V12250HR3 N--Channel Enhancement--ModeLateral MOSFETs MRF6V12250HSR3 RF Powertransistors designedfor applications operating at frequencies between960and1215MHz. Thesedevices aresuitablefor useinpulsed applications. TypicalPulsedPerformance: V =50Volts,I = 100mA, P = DD DQ out 960--1215MHz,275W,50V 275Watts Peak (27.5Watts Avg.), f = 1030MHz, PulseWidth= 128 sec, PULSED Duty Cycle= 10% LATERALN--CHANNEL Power Gain 20.3dB RFPOWERMOSFETs DrainEfficiency 65.5% Capableof Handling10:1VSWR, 50Vdc, 1030MHz, 275Watts Peak Power TypicalBroadbandPerformance: V =50Volts,I = 100mA, P = DD DQ out 250Watts Peak (25Watts Avg.), f = 960--1215MHz, PulseWidth= 128 sec, Duty Cycle= 10% Power Gain 19.8dB CASE465--06,STYLE1 DrainEfficiency 58% NI--780 Features MRF6V12250HR3 CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Matchedfor Easeof Use QualifiedUptoaMaximum of 50V Operation DD IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C CASE465A--06,STYLE1 Operation NI--780S RoHSCompliant MRF6V12250HSR3 InTapeandReel. R3Suffix = 250Units per 56mm, 13inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+100 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase CaseTemperature80C,275W Pulsed,128sec PulseWidth,10%Duty Cycle Z 0.08 C/W JC 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) B (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (V =0Vdc,I =100mA) GS D ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 100 Adc DSS (V =90Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 0.9 1.7 2.4 Vdc GS(th) (V =10Vdc,I =662Adc) DS D GateQuiescentVoltage V 1.7 2.4 3.2 Vdc GS(Q) (V =50Vdc,I =100mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =1.6Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 0.46 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 352 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 695 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =100mA,P =275W Peak (27.5W Avg.),f=1030MHz, DD DQ out Pulsed,128sec PulseWidth,10%Duty Cycle PowerGain G 19 20.3 22 dB ps DrainEfficiency 63 65.5 % D InputReturnLoss IRL --14 --9 dB TypicalBroadbandPerformance960--1215MHz (InFreescale960--1215MHz TestFixture,50ohm system)V =50Vdc, DD I =100mA,P =250W Peak (25W Avg.),f=960--1215MHz,Pulsed,128sec PulseWidth,10%Duty Cycle DQ out PowerGain G 19.8 dB ps DrainEfficiency 58 % D 1. Partinternally matchedbothoninputandoutput. MRF6V12250HR3MRF6V12250HSR3 RF DeviceData FreescaleSemiconductor 2