DocumentNumber:MRF6VP2600H
FreescaleSemiconductor
Rev. 5.1, 7/2010
TechnicalData
RFPowerFieldEffectTransistor
N--Channel Enhancement--ModeLateral MOSFET
MRF6VP2600HR6
Designedprimarily for widebandapplications withfrequencies upto 500MHz.
Deviceis unmatchedandis suitableforuseinbroadcastapplications.
Typical DVB--T OFDM Performance: V =50Volts,I = 2600mA,
DD DQ
P = 125Watts Avg., f = 225MHz, ChannelBandwidth= 7.61MHz,
out 2--500MHz,600W,50V
Input Signal PAR = 9.3dB @ 0.01%Probability onCCDF.
LATERALN--CHANNEL
Power Gain 25dB
BROADBAND
DrainEfficiency 28.5%
RFPOWERMOSFET
ACPR @ 4MHz Offset --61dBc @ 4kHz Bandwidth
Typical PulsedPerformance: V =50Volts,I = 2600mA,
DD DQ
P = 600Watts Peak, f = 225MHz, PulseWidth= 100 sec, Duty
out
Cycle= 20%
Power Gain 25.3dB
Drain Efficiency 59%
Capableof Handling10:1VSWR, @ 50Vdc, 225MHz, 600Watts Peak
Power, PulseWidth= 100 sec, Duty Cycle= 20%
Features
CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters
CASE375D--05,STYLE1
CW OperationCapability withAdequateCooling
NI--1230
QualifiedUptoaMaximum of 50V Operation
DD
PARTISPUSH--PULL
IntegratedESD Protection
Designedfor Push--Pull Operation
Greater NegativeGate--SourceVoltageRangefor ImprovedClass C
Operation
RoHSCompliant
InTapeandReel. R6Suffix = 150Units per 56mm, 13inchReel. RF /V31 RF /V
inA GSA outA DSA
RF /V42 RF /V
inB GSB outB DSB
(Top View)
Figure1.PinConnections
Table1.MaximumRatings
Rating Symbol Value Unit
Drain--Source Voltage V --0.5,+110 Vdc
DSS
Gate--SourceVoltage V --6.0,+10 Vdc
GS
StorageTemperatureRange T --65to+150 C
stg
CaseOperatingTemperature T 150 C
C
(1,2)
OperatingJunctionTemperature T 225 C
J
Table2.ThermalCharacteristics
(2,3)
Characteristic Symbol Value Unit
ThermalResistance,JunctiontoCase R C/W
JC
CaseTemperature99C,125W CW,225MHz,50Vdc,I =2600mA 0.20
DQ
CaseTemperature64C,610W CW,352.2MHz,50Vdc,I =150mA 0.14
DQ
CaseTemperature81C,610W CW,88--108MHz,50Vdc,I =150mA 0.16
DQ
1. Continuous useat maximum temperaturewillaffect MTTF.
2. MTTFcalculatoravailableat Table3.ESDProtectionCharacteristics
TestMethodology Class
HumanBody Model(perJESD22--A114) 2(Minimum)
MachineModel(perEIA/JESD22--A115) A (Minimum)
ChargeDeviceModel(perJESD22--C101) IV (Minimum)
Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted)
A
Characteristic Symbol Min Typ Max Unit
(1)
OffCharacteristics
Gate--SourceLeakageCurrent I 10 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
Drain--SourceBreakdownVoltage V 110 Vdc
(BR)DSS
(I =150mA,V =0Vdc)
D GS
Zero Gate Voltage Drain Leakage Current I 50 Adc
DSS
(V =50Vdc,V =0Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 2.5 mA
DSS
(V =100Vdc,V =0Vdc)
DS GS
OnCharacteristics
(1)
GateThresholdVoltage V 1 1.65 3 Vdc
GS(th)
(V =10Vdc,I =800 Adc)
DS D
(2)
GateQuiescentVoltage V 1.5 2.7 3.5 Vdc
GS(Q)
(V =50Vdc,I =2600mAdc,MeasuredinFunctionalTest)
DD D
(1)
Drain--SourceOn--Voltage V 0.25 Vdc
DS(on)
(V =10Vdc,I =2Adc)
GS D
(1)
DynamicCharacteristics
ReverseTransferCapacitance C 1.7 pF
rss
(V =50Vdc 30mV(rms)ac @1MHz,V =0Vdc)
DS GS
OutputCapacitance C 101 pF
oss
(V =50Vdc 30mV(rms)ac @1MHz,V =0Vdc)
DS GS
InputCapacitance C 287 pF
iss
(V =50Vdc,V =0Vdc 30mV(rms)ac @1MHz)
DS GS
(2)
FunctionalTests (InFreescaleTestFixture,50ohm system)V =50Vdc,I =2600mA,P =125W Avg.,f=225MHz,DVB--T
DD DQ out
OFDM SingleChannel. ACPRmeasuredin7.61MHz ChannelBandwidth @ 4MHzOffset.
PowerGain G 24 25 27 dB
ps
Drain Efficiency 27 28.5 %
D
Adjacent ChannelPowerRatio ACPR --61 --59 dBc
Input ReturnLoss IRL --18 --9 dB
TypicalPerformance352.2MHz (InFreescale352.2MHz TestFixture,50ohm system)V =50Vdc,I =150mA,P =600W CW
DD DQ out
PowerGain G 22 dB
ps
Drain Efficiency 68 %
D
Input ReturnLoss IRL --15 dB
TypicalPerformance88--108MHz (InFreescale88--108MHz TestFixture,50ohm system)V =50Vdc,I =150mA,P =600W
DD DQ out
CW
PowerGain G 24.5 dB
ps
Drain Efficiency 74 %
D
Input ReturnLoss IRL --5 dB
1. Eachsideofdevicemeasuredseparately.
2. Measurementmadewithdevicein push--pullconfiguration.
MRF6VP2600HR6
RF DeviceData
FreescaleSemiconductor
2