DocumentNumber:MRF8S9102N FreescaleSemiconductor Rev. 0, 2/2011 TechnicalData RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET MRF8S9102NR3 Designed for CDMA base station applications with frequencies from 865 to 960MHz.CanbeusedinClassABandClassCforalltypicalcellularbase stationmodulationformats. TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 750mA, P = 28Watts Avg., IQ MagnitudeClipping, Channel out 865--960MHz,28WAVG.,28V Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability SINGLEW--CDMA onCCDF. LATERALN--CHANNEL G OutputPAR ACPR ps D RFPOWERMOSFET Frequency (dB) (%) (dB) (dBc) 920MHz 23.1 36.4 6.3 --35.5 940MHz 23.1 36.4 6.2 --36.1 960MHz 22.8 36.6 6.1 --35.8 Capableof Handling10:1VSWR, 32Vdc, 940MHz, 144Watts CW Output Power (3dB Input Overdrivefrom RatedP ), Designedfor out EnhancedRuggedness 1dB CompressionPoint 100Watts CW Typical P out CASE2021--03,STYLE1 OM--780--2 880MHz PLASTIC TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 750mA, P = 28Watts Avg., IQ MagnitudeClipping, Channel out Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability onCCDF. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 865MHz 22.9 35.4 6.4 --34.7 880MHz 23.0 35.5 6.2 --35.1 895MHz 22.8 35.6 6.0 --35.7 Features 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications 225C CapablePlastic Package RoHSCompliant InTapeandReel. R3Suffix = 250Units, 32mm TapeWidth, 13inchReel. FreescaleSemiconductor, Inc., 2011. All rights reserved. MRF8S9102NR3 RF DeviceData FreescaleSemiconductor 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+70 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature81C,28W CW,28Vdc,I =750mA,880MHz 0.63 DQ CaseTemperature80C,100W CW,28Vdc,I =750mA,880MHz 0.58 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.5 2.3 3.0 Vdc GS(th) (V =10Vdc,I =400 Adc) DS D GateQuiescentVoltage V 3.1 Vdc GS(Q) (V =28Vdc,I =750mAdc) DS D (4) FixtureGateQuiescentVoltage V 4.6 6.2 7.6 Vdc GG(Q) (V =28Vdc,I =750mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =1.7Adc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat