DocumentNumber:MRFE8VP8600H
NXPSemiconductors
Rev. 1, 08/2017
Technical Data
RFPowerLDMOSTransistors
MRFE8VP8600H
N--Channel Enhancement--Mode Lateral MOSFETs
MRFE8VP8600HS
These high power transistors are designed for use in UHF TV broadcast
applications. The devices have an integratedinput matchingnetwork forbetter
powerdistributionandareidealforuseinbothanaloganddigitalTV
transmitters.
470860MHz,140WAVG.,50V
DBV--TBroadbandClassABPerformance: V =50Vdc,I = 1400 mA,
DD DQ
RFPOWERLDMOSTRANSISTORS
Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Output
P
out f G PAR
ps D
SignalType (W) (MHz) (dB) (%) (dB)
DVB--T(8k OFDM) 140 Avg. 474 20.2 29.7 8.9
610 20.7 34.5 8.2
810 20.0 34.0 8.4
NI--1230H--4S
LoadMismatch/Ruggedness
MRFE8VP8600H
Frequency P Test
out
SignalType VSWR
(MHz) (W) Voltage Result
860 DVB--T 20:1 at all 125 50 No Device
(8k OFDM) Phase Angles (3 dB Degradation
Overdrive)
Features
NI--1230S--4S
Excellent thermal characteristics MRFE8VP8600HS
High gain for reduced PA size
High efficiency for Class AB and Doherty operations
Integrated input matching and unmatched output
Extended negative gate--source voltage range of 6 Vdc to +10 Vdc
31 DrainA
GateA
GateB DrainB
42
(Top View)
Note: The backside of the package is the
source terminalforthe transistor.
Figure1.PinConnections
2017NXPB.V. MRFE8VP8600HMRFE8VP8600HS
RF DeviceData
NXP Semiconductors 1Table1.MaximumRatings
Rating Symbol Value Unit
Drain--Source Voltage V 0.5, +115 Vdc
DSS
Gate--Source Voltage V 6.0, +10 Vdc
GS
Storage Temperature Range T 65 to +150 C
stg
Case Operating Temperature Range T 40 to +150 C
C
(1)
Operating Junction Temperature Range T 40 to +225 C
J
TotalDevice Dissipation @ T =25 C P 1250 W
C D
Derate above 25 C 6.25 W/ C
Table2.ThermalCharacteristics
(2,3)
Characteristic Symbol Value Unit
ThermalResistance, Junction to Case R 0.16 C/W
JC
Case Temperature 99C, 125 W DVB--T(8k OFDM), 50Vdc, I =1400mA, 860MHz
DQ
Table3.ESDProtectionCharacteristics
TestMethodology Class
Human Body Model(perJESD22--A114) 2, passes 2500 V
Machine Model(perEIA/JESD22--A115) B, passes 250 V
Charge Device Model(perJESD22--C101) IV, passes 2000 V
Table4.ElectricalCharacteristics (T =25 C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
(4)
OffCharacteristics
Gate--Source Leakage Current I 1 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
Drain--Source Breakdown Voltage V 115 118 Vdc
(BR)DSS
(V =0Vdc,I =10 Adc)
GS D
Zero Gate Voltage Drain Leakage Current I 5 Adc
DSS
(V =50Vdc,V =0Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 20 Adc
DSS
(V =115Vdc,V =0Vdc)
DS GS
OnCharacteristics
(4)
V 1.3 2.1 2.3 Vdc
Gate Threshold Voltage
GS(th)
(V =10Vdc,I =925 Adc)
DS D
(5)
Gate Quiescent Voltage V 1.8 2.4 2.8 Vdc
GS(Q)
(V =50Vdc,I =1400 mAdc, Measured in FunctionalTest)
DD D
(4)
Drain--Source On--Voltage V 0.1 0.3 0.5 Vdc
DS(on)
(V =10Vdc,I =2.8Adc)
GS D
Forward Transconductance g 19.4 S
fs
(V =10Vdc,I =17Adc)
DS D
(4)
DynamicCharacteristics
(6)
Reverse TransferCapacitance C 1.62 pF
rss
(V =50Vdc 30 mV(rms)ac @ 1 MHz, V =0Vdc)
DS GS
(6)
Output Capacitance C 71.2 pF
oss
(V =50Vdc 30 mV(rms)ac @ 1 MHz, V =0Vdc)
DS GS
(7)
Input Capacitance C 452 pF
iss
(V =50Vdc,V =0Vdc 30 mV(rms)ac @ 1 MHz)
DS GS
1. Continuous use at maximum temperature willaffect MTTF.
2. MTTFcalculatoravailable at