Document Number: MRFG35003N6A Freescale Semiconductor Rev. 2, 6/2009 Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. Typical Single-Carrier W-CDMA Performance: V = 6 Volts, I = DD DQ 180 mA, P = 450 mWatts Avg., 3550 MHz, Channel Bandwidth = out 3.5 GHz, 3 W, 6 V 3.84 MHz, PAR = 8.5 dB 0.01% Probability on CCDF. POWER FET Power Gain 10 dB GaAs PHEMT Drain Efficiency 27% ACPR 5 MHz Offset -42.5 dBc in 3.84 MHz Channel Bandwidth 3 Watts P1dB 3550 MHz, CW Features Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity RoHS Compliant In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. CASE 466-03, STYLE 1 PLD-1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V 8 Vdc DSS Gate-Source Voltage V -5 Vdc GS RF Input Power P 24 dBm in Storage Temperature Range T -65 to +150 C stg (1) Channel Temperature T 175 C ch Table 2. Thermal Characteristics (2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 5.9 C/W JC Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 2 (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Unit Temperature Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C 1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table 5. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Saturated Drain Current I 2.9 Adc DSS (V = 3.5 Vdc, V = 0 Vdc) DS GS Off State Leakage Current I < 1 100 Adc GSS (V = -0.4 Vdc, V = 0 Vdc) GS DS Off State Drain Current I 50 1000 Adc DSO (V = 6 Vdc, V = -2.2 Vdc) DS GS Off State Current I < 1 15 mAdc DSX (V = 20 Vdc, V = -2.5 Vdc) DS GS Gate-Source Cut-off Voltage V -1.2 -0.95 -0.7 Vdc GS(th) (V = 3.5 Vdc, I = 15 mA) DS DS Quiescent Gate Voltage V -1.1 -0.82 -0.6 Vdc GS(Q) (V = 6 Vdc, I = 180 mA) DS D Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 6 Vdc, I = 180 mA, P = 450 mWatts Avg., f = 3550 MHz, DD DQ out Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth 5 MHz Offset. PAR = 8.5 dB 0.01% Probability on CCDF. Power Gain G 8 10 dB ps Drain Efficiency 22 27 % D Adjacent Channel Power Ratio ACPR -42.5 -38 dBc Typical RF Performance (In Freescale Test Fixture, 50 hm system) V = 6 Vdc, I = 180 mA, f = 3550 MHz DD DQ Output Power, 1 dB Compression Point, CW P 3 W 1dB MRFG35003N6AT1 RF Device Data Freescale Semiconductor 2