DocumentNumber:MRFX1K80N NXPSemiconductors Rev. 0, 04/2018 Technical Data RFPowerLDMOSTransistors MRFX1K80N High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs MRFX1K80GN ThesehighruggednessdevicesaredesignedforuseinhighVSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatchedinputandoutputdesignsupportsfrequencyusefrom1.8to 1.8400MHz,1800WCW,65V 400 MHz. WIDEBAND TypicalPerformance RFPOWERLDMOSTRANSISTORS Frequency V DD P G out ps D (MHz) SignalType (V) (W) (dB) (%) (1,2) 87.5108 CW 60 1670 CW 23.8 83.5 (3) 230 Pulse 65 1800Peak 24.4 75.7 OM--1230--4L (100 sec,20%DutyCycle) PLASTIC MRFX1K80N LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result (3) 230 Pulse >65:1 at all 14 W Peak 65 No Device (100 sec, 20% Phase Angles (3 dB Degradation OM--1230G--4L Duty Cycle) Overdrive) PLASTIC 1. Measured in 87.5108 MHz broadband reference circuit (page 5). MRFX1K80GN 2. The values shown are the centerband performance numbers across the indicated frequency range. 3. Measured in 230 MHz narrowband production test fixture (page 11). Features Unmatched input and output allowing wide frequency range utilization 31 DrainA GateA Device can be used single--ended or in a push--pull configuration Qualified up to a maximum of 65 V operation DD Characterized from 30 to 65 V for extended power range DrainB GateB42 Lower thermal resistance package High breakdown voltage for enhanced reliability Suitable for linear application with appropriate biasing Integrated ESD protection with greater negative gate--source voltage range for (Top View) improved Class C operation Note: Exposed backside of the package is Included in NXP product longevity program with assured supply for a minimum thesourceterminalforthetransistor. of 15 years after launch Figure1.PinConnections TypicalApplications Industrial, scientific, medical (ISM) Laser generation Plasma generation Particleaccelerators MRI, RF ablation and skin treatment Industrial heating, welding and dryingsystems Radio and VHF TV broadcast Aerospace HF communications Radar 2018NXPB.V. MRFX1K80NMRFX1K80GN RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +179 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 3333 W C D Derate above 25 C 16.7 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.06 C/W JC CW: Case Temperature 112 C, 1800 W CW, 65 Vdc, I =150 mA, 98 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.009 C/W JC Pulse: Case Temperature 77C, 1800 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 65 Vdc, I =100 mA, 230 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500 V Charge Device Model(perJESD22--C101) C3, passes 1200 V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 179 193 Vdc (BR)DSS (V =0Vdc,I =100 mAdc) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 100 mAdc DSS (V =179 Vdc, V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 2.1 2.5 2.9 Vdc GS(th) (V =10Vdc,I =740 Adc) DS D Gate Quiescent Voltage V 2.5 2.9 3.3 Vdc GS(Q) (V =65Vdc,I =100 mAdc, Measured in FunctionalTest) DD DQ(A+B) (4) Drain--Source On--Voltage V 0.21 Vdc DS(on) (V =10Vdc,I =2.76Adc) GS D (4) Forward Transconductance g 44.7 S fs (V =10Vdc,I =43Adc) DS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at