DocumentNumber:A3G20S250--01S NXPSemiconductors Rev. 0, 09/2018 Technical Data RFPowerGaNTransistor A3G20S250--01SR3 This45WRFpowerGaNtransistorisdesignedforcellularbasestation applications coveringthefrequency rangeof 1800to2200MHz. This part is characterized and performance is guaranteed for applications operatinginthe1800to2200MHzband.Thereisnoguaranteeofperformance 18002200MHz,45WAVG.,48V when this part is used in applications designed outside of these frequencies. AIRFASTRFPOWERGaN TRANSISTOR 2000MHz Typical Single--Carrier W--CDMA Performance: V =48Vdc, DD I = 250 mA, P = 45 W Avg., Input Signal PAR = 9.9 dB 0.01% DQ out Probability on CCDF. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 1805 MHz 17.6 34.8 6.9 35.1 10 NI--400S--2SA 1990 MHz 17.9 37.2 7.0 34.4 8 2170 MHz 18.2 37.0 6.9 34.1 10 Features High terminal impedances for optimal broadband performance RF /V21 RF /V in GS out DS Designed for digital predistortion error correction systems Optimized for Doherty applications (Top View) Figure1.PinConnections 2018 NXP B.V. A3G20S250--01SR3 RF Device Data NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 125 Vdc DSS Gate--Source Voltage V 8, 0 Vdc GS Operating Voltage V 0to+55 Vdc DD Maximum Forward Gate Current T =25 C I 24 mA C GMAX Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 55to+150 C C Operating Junction Temperature Range T 55to+225 C J (1) Absolute Maximum ChannelTemperature T 275 C MAX Table2.ThermalCharacteristics Characteristic Symbol Value Unit (2) ThermalResistance by Infrared Measurement, Active Die Surface--to--Case R (IR) 1.0 C/W JC Case Temperature 76C, P =78W D (3) ThermalResistance by Finite Element Analysis, Channel--to--Case R 1.32 C/W CHC Case Temperature 80C, P =78W (FEA) D Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(per JS--001--2017) 1C Charge Device Model(per JS--002--2014) C3 Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Drain--Source Breakdown Voltage V 150 Vdc (BR)DSS (V =8Vdc,I =24mAdc) GS D OnCharacteristics Gate Threshold Voltage V 3.8 3.0 2.3 Vdc GS(th) =10Vdc,I =24mAdc) (V DS D Gate Quiescent Voltage V 3.6 2.9 2.6 Vdc GS(Q) (V =48Vdc,I =250 mAdc, Measured in Functional Test) DD D Gate--Source Leakage Current I 7.5 mAdc GSS (V =0Vdc,V =5Vdc) DS GS 1. Reliability tests were conducted at 225 C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to