DU28120V RF Power MOSFET Transistor Rev. V1 120 W, 2 - 175 MHz, 28 V Features Package Outline N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25 C Parameter Symbol Rating Units Drain-Source Voltage V 65 V DS Gate-Source Voltage V 20 V GS Drain-Source Current I 12 A DS Power Dissipation P 250 W D Junction Temperature T 200 C J Storage Temperature T -55 to +150 C STG Thermal Resistance 0.7 C/W JC TYPICAL DEVICE IMPEDANCE F (MHz) Z () Z () IN LOAD Z is the series equivalent input impedance of the device IN 30 3.0 - j12.5 8.0 + j6.0 from gate to source. 50 1.5 - j8.5 7.0 +j6.5 Z is the optimum series equivalent load impedance 100 1.0 - j6.0 6.5 + j5.0 LOAD as measured from drain to ground. V = 28V, I = 600mA, P = 120 W DD DQ OUT ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BV 65 - V V = 0.0 V , I = 3.0 mA DSS GS DS Drain-Source Leakage Current I - 6.0 mA V = 28.0 V , V = 0.0 V DSS GS GS Gate-Source Leakage Current I - 6.0 A V = 20.0 V , V = 0.0 V GSS GS DS Gate Threshold Voltage V 2.0 6.0 V V = 10.0 V , I = 600.0 mA GS(TH) DS DS Forward Transconductance G 3.0 - S V = 10.0 V , I = 6000.0 mA , V = 1.0V, 80 s Pulse M DS DS GS Input Capacitance C - 270 pF V = 28.0 V , F = 1.0 MHz ISS DS Output Capacitance - 240 pF V = 28.0 V , F = 1.0 MHz C DS OSS Reverse Capacitance C - 48 pF V = 28.0 V , F = 1.0 MHz RSS DS Power Gain G 13 - dB V = 28.0 V, I = 600 mA, P = 120.0 W F =175 MHz P DD DQ OUT Drain Efficiency 60 - % V = 28.0 V, I = 600 mA, P = 120.0 W F =175 MHz D DD DQ OUT Return Loss R 10 - % V = 28.0 V, I = 600 mA, P = 120.0 W F =175 MHz L DD DQ OUT Load Mismatch Tolerance VSWR-T - 30:1 - V = 28.0 V, I = 600 mA, P = 120.0 W F =175 MHz DD DQ OUT 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: DU28120V RF Power MOSFET Transistor Rev. V1 120 W, 2 - 175 MHz, 28 V Typical Broadband Performance Curves EFFICIENCY FREQUENCY GAIN FREQUENCY VS VS V =28 V I =600 mA P =120 W V =28 V I =600 mA P =120 W DD DQ OUT DD DQ OUT 25 70 65 20 60 15 55 10 50 0 25 50 100 150 175 200 0 50 150 200 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT SUPPLY VOLTAGE POWER OUTPUT POWER INPUT VS VS F=175 MHz I =600 mA P =3.0 W V =28 V I =600 mA DD DQ DQ IN 140 140 30MHz 120 120 175MHz 100 100 80 80 100MHz 60 60 40 40 20 20 0.1 0.2 0.3 1 2 3 4 5 6 7 8 9 16 20 25 30 33 SUPPLY VOLTAGE (V) POWER INPUT (W) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: