VRF161(MP) 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor de- signed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation M174 distortion. FEATURES 70:1 Load VSWR Capability at Specified Operating Conditions Improved Ruggedness V = 170V (BR)DSS Nitride Passivated 200W with 24dB Typical Gain 30MHz, 50V 200W with 14dB Typical Gain 150MHz, 50V Refractory Gold Metallization Excellent Stability & Low IMD High Power Replacement for MRF151 Available in Matched Pairs RoHS Compliant Maximum Ratings All Ratings: T =25C unless otherwise specified C Symbol Parameter VRF161(MP) Unit V Drain-Source Voltage 170 V DSS I Continuous Drain Current T = 25C 20 A D C V Gate-Source Voltage 40 V GS P D Total Device dissipation T = 25C 350 W C T Storage Temperature Range -65 to 150 STG C T Operating Junction Temperature 200 J Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V Drain-Source Breakdown Voltage (V = 0V, I = 100mA) 170 180 (BR)DSS GS D V V On State Drain Voltage (I = 10A, V = 10V) 2.0 2.3 DS(ON) D(ON) GS I Zero Gate Voltage Drain Current (V = 100V, V = 0V) 1 mA DSS DS GS I Gate-Source Leakage Current (V = 20V, V = 0V) 1.0 A GSS DS DS g Forward Transconductance (V = 10V, I = 5A) 6.0 8.1 mhos fs DS D V Gate Threshold Voltage (V = 10V, I = 100mA) 2.9 3.6 4.4 V GS(TH) DS D Thermal Characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance 0.50 C/W JC CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics VRF161(MP) Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 500 ISS GS C Output Capacitance V = 150V 180 pF oss DS C Reverse Transfer Capacitance f = 1MHz 20 rss Functional Characteristics Symbol Parameter Min Typ Max Unit G f = 30MHz, V = 50V, I = 250mA, P = 200W 20 24 PS 1 DD DQ out dB G f = 150MHz, V = 50V, I = 250mA, P = 200W 14 PS DD DQ out f = 30MHz, V = 50V, I = 250mA, P = 200W 50 % D 1 DD DQ out 1 IMD f = 30MHz, f = 30.001MHz, V = 50V, I = 250mA, P = 200W -30 dBc (d3) 1 2 DD DQ out PEP f = 30MHz, V =50V, I = 250mA, P = 200W CW DD DQ out No Degradation in Output Power 70:1 VSWR - All Phase Angles, 0.2mSec X 20% Duty Factor 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 50 30 17V 250s PULSE TEST<0.5 % DUTY 45 CYCLE 10V 25 40 T = -55C J 35 20 30 T = 25C J 25 7V 15 T = 125C J 20 6V 10 5.5V 15 5V 10 5 4.5V 5 4V 3.5V 0 0 0 2 4 6 8 10 0 5 10 15 20 25 30 35 V , DRAIN-TO-SOURCE VOLTAGE (V) V , GATE-TO-SOURCE VOLTAGE (V) DS(ON) GS FIGURE 1, Output Characteristics FIGURE 2, Transfer Characteristics 100 10,000 1us DC Line 1,000 C iss 10ms 10 C oss 1ms R ds(on) 100 100ms C rss T = 200C J T = 25C V C DS Max 10 1 0 25 50 75 100 125 150 1 10 100 800 V , DRAIN-TO-SOURCE VOLTAGE (V) V , DRAIN-TO-SOURCE VOLTAGE (V) DS DS FIGURE 3, Capacitance vs Drain-to-Source Voltage FIGURE 4, Forward Safe Operating Area 050-4977 Rev C 10-2020 C, CAPACITANCE (pF) I , DRAIN CURRENT (A) D I , DRAIN CURRENT (A) I , DRAIN CURRENT (A) D D