VRF2933 VRF2933MP 50V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF2933 is a gold-metallized silicon n-channel RF power transistor de- signed for broadband commercial and military applications requiring high power S S and gain without compromising reliability, ruggedness, or inter-modulation distortion. M177 G FEATURES 70:1 Load VSWR Capability at Speci ed Operating Conditions Improved Ruggedness V = 170V (BR)DSS Nitride Passivated 300W with 22dB Typ. Gain 30MHz, 50V Excellent Stability & Low IMD Refractory Gold Metallization Common Source Con guration Improved Replacement for SD2933 Available in Matched Pairs Thermally Enhanced Package NOW 14% lower V RoHS Compliant DS(ON) Maximum Ratings All Ratings: T =25C unless otherwise speci ed C Symbol Parameter VRF2933(MP) Unit V Drain-Source Voltage 170 V DSS I Continuous Drain Current T = 25C 42 A D C V Gate-Source Voltage 40 V GS P D Total Device dissipation T = 25C 648 W C T Storage Temperature Range -65 to 150 STG C T Operating Junction Temperature Max 200 J Static Electrical Characteristics Symbol Parameter Min Typ Max Unit V Drain-Source Breakdown Voltage (V = 0V, I = 100mA) 170 180 (BR)DSS GS D V V On State Drain Voltage (I = 20A, V = 10V) 2.1 2.7 DS(ON) D(ON) GS I Zero Gate Voltage Drain Current (V = 100V, V = 0V) 2.0 mA DSS DS GS I Gate-Source Leakage Current (V = 20V, V = 0V) 2.0 A GSS DS DS g Forward Transconductance (V = 10V, I = 20A) 8 mhos fs DS D V Gate Threshold Voltage (V = 10V, I = 100mA) 2.9 3.6 4.4 V GS(TH) DS D Thermal Characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance 0.27 C/W JC CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Dynamic Characteristics VRF2933(MP) Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 740 ISS GS C Output Capacitance V = 50V 400 pF oss DS C Reverse Transfer Capacitance f = 1MHz 32 rss Functional Characteristics Symbol Parameter Min Typ Max Unit G f = 30MHz, V = 50V, I = 250mA, P = 300W 20 25 dB PS 1 DD DQ out f = 30MHz, V = 50V, I = 250mA, P = 300W CW 50 % D 1 DD DQ out f = 30MHz, V = 50V, I = 250mA, P = 300W CW, 1 DD DQ out No Degradation in Output Power 70:1 VSWR - All Phase Angles, 0.2 mSec X 20% Duty Factor Microsemi reserves the right to change, without notice, the speci cations and information contained herein. Typical Performance Curves 30 55 250 s PULSE 7.5V TEST<0.5 % DUTY 50 CYCLE 25 45 T = -55C 6.5V J 40 T = 25C J 20 6V 35 30 15 5.5V 25 20 10 5V 15 4.5V 10 5 T = 125C 4V J 5 3.5V 0 0 0 5 10 15 20 0 2 4 6 8 V , DRAIN-TO-SOURCE VOLTAGE (V) V , GATE-TO-SOURCE VOLTAGE (V) DS(ON) GS FIGURE 1, Output Characteristics FIGURE 2, Transfer Characteristics 100 1.0E 8 C I iss 1.0E 9 DMax C oss 10 R ds(on) PD Max 1.0E 10 C rss T = 125C J T = 75C C 1 1.0E 11 0 10 20 30 40 50 60 1 10 100 800 V , DRAIN-TO-SOURCE VOLTAGE (V) V , DRAIN-TO-SOURCE VOLTAGE (V) DS DS FIGURE 3, Capacitance vs Drain-to-Source Voltage FIGURE 4, Forward Safe Operating Area 050-4941 Rev K 10 -2020 C, CAPACITANCE (F) I , DRAIN CURRENT (A) D I , DRAIN CURRENT (A) I , DRAIN CURRENT (A) D D BVdss Line