LET9060C STMicroelectronics

LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P ( 28 V)= 60 W with 18 dB gain 945 OUT MHz P ( 36 V)= 90 W with 18 dB gain 945 OUT MHz BeO free package M243 epoxy sealed In compliance with the 2002/95/EC European directive Figure 1. Pin out Description The LET9060C is a common source n-channel enhancement-mode lateral field-effect RF power 1 transistor designed for broadband commercial and industrial applications at frequencies up to 3 1.0 GHz. The LET9060C is designed for high gain and broadband performance operating in 2 common source mode at 28 V. It is ideal for base station applications requiring high linearity. 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET9060C M243 LET9060C April 2011 Doc ID 16824 Rev 3 1/9 www.st.com 9Maximum ratings LET9060C 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 12 A D P Power dissipation ( T = 70 C) 130 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.0 C/W th(JC) 2/9 Doc ID 16824 Rev 3