X-On Electronics has gained recognition as a prominent supplier of MRF085HR5 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF085HR5 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF085HR5 NXP

MRF085HR5 electronic component of NXP
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Part No.MRF085HR5
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors High Ruggedness N--Channel
Datasheet: MRF085HR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 50
Multiples : 50
50 : USD 140.9264
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 158.6717
5 : USD 155.5884
10 : USD 154.7039
25 : USD 148.1566
50 : USD 146.1298
100 : USD 145.9701
250 : USD 145.9701
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Vgs - Gate-Source Voltage
Type
Brand
Number Of Channels
Numofpackaging
Factory Pack Quantity :
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the MRF085HR5 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF085HR5 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF085H NXPSemiconductors Rev. 1, 10/2017 Technical Data RFPowerLDMOSTransistor HighRuggedness N--Channel MRF085H Enhancement--ModeLateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications and sub--GHz aerospace and defense and mobile radio applications. Its unmatched input and output design allows for 1.81215MHz,85WCW,50V widefrequency rangeusefrom 1.8to1215MHz. WIDEBAND TypicalPerformance: V =50Vdc RFPOWERLDMOSTRANSISTOR DD P Frequency out G ps D SignalType (W) (MHz) (dB) (%) (1,2) 30520 CW 50 CW 14.0 40.0 (3) 520 CW 85 CW 25.6 73.3 LoadMismatch/Ruggedness Frequency P Test in (MHz) SignalType VSWR (W) Voltage Result NI--650H--4L (3) 520 CW >65:1 0.56 50 No Device at allPhase (3 dB Degradation Angles Overdrive) 1. Measured in 30520 MHz broadband reference circuit. 2. The values shown are the minimum measured performance numbers across the indicated frequency range. GateA31 DrainA 3. Measured in 520 MHz narrowband test circuit (page 5). Features Unmatched input and output allowing wide frequency range utilization GateB42 DrainB Device can be used single--ended or in a push--pull configuration Characterizedfrom30to50Vforeaseofuse Suitable for linear application (Top View) IntegratedESD protectionwithgreater negative gate--source voltage range Note: The backside of the package is the for improvedClass C operation source terminalforthe transistor. TypicalApplications Figure1.PinConnections Industrial, scientific, medical (ISM) Laser generation Plasmaetching Particleaccelerators Industrial heating, weldinganddryingsystems Broadcast Radio broadcast VHF TV broadcast Aerospace VHF omnidirectional range(VOR) HF and VHF communications Weather radar Mobile radio VHF and UHF radios 2017NXPB.V. MRF085H RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +133 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 50, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature Range T --40 to +150 C C (1,2) Operating Junction Temperature Range T --40 to +225 C J TotalDevice Dissipation T =25 C P 235 W C D Derate above 25 C 1.18 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.85 C/W JC CW: Case Temperature 85 C, 85 W CW, 50 Vdc, I = 100 mA, 520MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2000V Charge Device Model(perJESD22--C101) C2, passes 500V Table4.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 400 nAdc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 7 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 1.5 2.0 3.0 Vdc GS(th) (V =10Vdc,I =85 Adc) DS D Gate Quiescent Voltage V 2.0 2.6 3.3 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D(A+B) (4) Drain--Source On--Voltage V 0.27 Vdc DS(on) (V =10Vdc,I =210mAdc) GS D (4) DynamicCharacteristics Reverse TransferCapacitance C 0.17 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 14.7 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 39.0 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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