DocumentNumber:MRF085H NXPSemiconductors Rev. 1, 10/2017 Technical Data RFPowerLDMOSTransistor HighRuggedness N--Channel MRF085H Enhancement--ModeLateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications and sub--GHz aerospace and defense and mobile radio applications. Its unmatched input and output design allows for 1.81215MHz,85WCW,50V widefrequency rangeusefrom 1.8to1215MHz. WIDEBAND TypicalPerformance: V =50Vdc RFPOWERLDMOSTRANSISTOR DD P Frequency out G ps D SignalType (W) (MHz) (dB) (%) (1,2) 30520 CW 50 CW 14.0 40.0 (3) 520 CW 85 CW 25.6 73.3 LoadMismatch/Ruggedness Frequency P Test in (MHz) SignalType VSWR (W) Voltage Result NI--650H--4L (3) 520 CW >65:1 0.56 50 No Device at allPhase (3 dB Degradation Angles Overdrive) 1. Measured in 30520 MHz broadband reference circuit. 2. The values shown are the minimum measured performance numbers across the indicated frequency range. GateA31 DrainA 3. Measured in 520 MHz narrowband test circuit (page 5). Features Unmatched input and output allowing wide frequency range utilization GateB42 DrainB Device can be used single--ended or in a push--pull configuration Characterizedfrom30to50Vforeaseofuse Suitable for linear application (Top View) IntegratedESD protectionwithgreater negative gate--source voltage range Note: The backside of the package is the for improvedClass C operation source terminalforthe transistor. TypicalApplications Figure1.PinConnections Industrial, scientific, medical (ISM) Laser generation Plasmaetching Particleaccelerators Industrial heating, weldinganddryingsystems Broadcast Radio broadcast VHF TV broadcast Aerospace VHF omnidirectional range(VOR) HF and VHF communications Weather radar Mobile radio VHF and UHF radios 2017NXPB.V. MRF085H RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +133 Vdc DSS Gate--Source Voltage V --6.0, +10 Vdc GS Operating Voltage V 50, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature Range T --40 to +150 C C (1,2) Operating Junction Temperature Range T --40 to +225 C J TotalDevice Dissipation T =25 C P 235 W C D Derate above 25 C 1.18 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.85 C/W JC CW: Case Temperature 85 C, 85 W CW, 50 Vdc, I = 100 mA, 520MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2000V Charge Device Model(perJESD22--C101) C2, passes 500V Table4.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 400 nAdc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 Vdc (BR)DSS (V =0Vdc,I =50mA) GS D Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 7 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 1.5 2.0 3.0 Vdc GS(th) (V =10Vdc,I =85 Adc) DS D Gate Quiescent Voltage V 2.0 2.6 3.3 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D(A+B) (4) Drain--Source On--Voltage V 0.27 Vdc DS(on) (V =10Vdc,I =210mAdc) GS D (4) DynamicCharacteristics Reverse TransferCapacitance C 0.17 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 14.7 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 39.0 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at