DocumentNumber:MRF6S20010N FreescaleSemiconductor Rev. 4, 1/2014 Technical Data RFPowerFieldEffectTransistors MRF6S20010NR1 N--Channel Enhancement--ModeLateral MOSFETs MRF6S20010GNR1 DesignedforClassAorClassABgeneralpurposeapplicationswith frequenciesfrom1600to2200MHz.Suitableforanaloganddigitalmodulation and multipurpose amplifier applications. Typical Two--Tone Performance 2170 MHz: V =28Volts,I = DD DQ 1600--2200MHz,10W,28V 130 mA, P = 10Watts PEP out GSM,GSMEDGE Power Gain 15.5 dB SINGLEN--CDMA Drain Efficiency 36% 2xW--CDMA IMD --34dBc LATERALN--CHANNEL Typical 2--Carrier W--CDMA Performance: V =28Volts,I = 130 mA, DD DQ RFPOWERMOSFETs P = 1 Watt Avg., Full Frequency Band (2130--2170 MHz), Channel out Bandwidth= 3.84MHz. PAR = 8.5dB 0.01% Probability Power Gain 15.5 dB Drain Efficiency 15% IM3 10MHz Offset --47dBc in3.84MHz Channel Bandwidth ACPR 5MHz Offset --49dBc in3.84MHz Channel Bandwidth Typical Single--Carrier N--CDMA Performance: V =28Volts,I = DD DQ TO--270--2 130 mA, P = 1 Watt Avg., Full Frequency Band (1930--1990 MHz), out PLASTIC IS--95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel MRF6S20010NR1 Bandwidth= 1.2288MHz. PAR = 9.8dB 0.01%Probability onCCDF. Power Gain 15.5 dB Drain Efficiency 16% ACPR 885kHz Offset = --60dBc in30kHz Bandwidth Typical GSM EDGE Performance: V =28Volts,I = 130 mA, P = DD DQ out 4 Watts Avg., Full Frequency Band (1805--1880 MHz) TO--270G--2 Power Gain 16 dB PLASTIC Drain Efficiency 33% MRF6S20010GNR1 EVM 1.3%rms Capableof Handling5:1VSWR, 28Vdc, 2000MHz, 10Watts CW Output Power Features CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters Internally Matchedfor Easeof Use RF /V21 in GS RF /V Qualified Up to a Maximum of 32 V Operation out DS DD IntegratedESD Protection 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel. (Top View) Note: The backside of the package is the source terminalforthe transistor. Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +68 Vdc DSS Gate--Source Voltage V --0.5, +12 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC Case Temperature 78C, 1 W CW 2.3 Case Temperature 79C, 10W PEP, Two--ToneTest 2.9 Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1A Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =68Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 500 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.5 2.2 3.5 Vdc GS(th) (V =10Vdc,I =40 Adc) DS D Gate Quiescent Voltage V 2 2.8 4 Vdc GS(Q) (V =28Vdc,I =130 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.33 0.4 Vdc DS(on) (V =10Vdc,I =0.4Adc) GS D (3) DynamicCharacteristics Output Capacitance C 20 pF oss (V =28Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Reverse TransferCapacitance C 11.6 pF rss (V =28Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 120 pF iss (V =28Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS (4) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =130mA, P =10W PEP,f1=2170MHz, DD DQ out f2=2170.1MHz, Two--ToneTest PowerGain G 14 15.5 17 dB ps Drain Efficiency 33 36 % D Intermodulation Distortion IMD --34 --28 dBc Input Return Loss IRL --15 --9 dB 1. MTTFcalculatoravailable at