X-On Electronics has gained recognition as a prominent supplier of MRF6V2010NR1 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF6V2010NR1 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF6V2010NR1 NXP

MRF6V2010NR1 electronic component of NXP
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Part No.MRF6V2010NR1
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Freescale Semiconductor RF MOSFET Transistors VHV6 10W TO270-2N
Datasheet: MRF6V2010NR1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 500
Multiples : 500
500 : USD 14.7251
N/A

Obsolete
0
MOQ : 500
Multiples : 500
500 : USD 23.2794
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 30.5748
10 : USD 29.8944
500 : USD 29.8836
N/A

Obsolete
   
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RoHS - XON
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Transistor Polarity
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Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
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Minimum Operating Temperature
Maximum Operating Temperature
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Vgs - Gate-Source Voltage
Series
Type
Brand
Factory Pack Quantity :
Vgs Th - Gate-Source Threshold Voltage
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Channel Mode
Cnhts
Hts Code
Mxhts
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We are delighted to provide the MRF6V2010NR1 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF6V2010NR1 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF6V2010N NXPSemiconductors Rev. 6, 9/2016 Technical Data RFPowerFieldEffectTransistors MRF6V2010N N--Channel Enhancement--Mode Lateral MOSFETs MRF6V2010NB Designed primarily for CW large--signal output and driver applications with MRF6V2010GN frequenciesupto450MHz.Devicesareunmatchedandaresuitableforusein industrial, medical and scientific applications. Typical CW performance at 220 MHz: V =50Vdc,I =30mA, DD DQ 10--450MHz,10W,50V P =10W out LATERALN--CHANNEL Power gain 23.9 dB BROADBAND Drain efficiency 62% RFPOWERMOSFETs Capable of handling 10:1 VSWR 50 Vdc, 220 MHz, 10 W CW output power Features TO--270--2 Characterized with series equivalent large--signal impedance parameters PLASTIC Qualified up to a maximum of 50 V operation DD MRF6V2010N Integrated ESD protection 225C capable plastic package TO--272--2 PLASTIC MRF6V2010NB TO--270G--2 PLASTIC MRF6V2010GN 21 Gate Drain (Top View) Note: Exposed backside of the package is the source terminalforthe transistor. Figure1.PinConnections 20072008, 2010, 2016 NXP B.V. MRF6V2010NMRF6V2010NBMRF6V2010GN RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +110 Vdc DSS Gate--Source Voltage V --0.5, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case Case Temperature 81C, 10 W CW R 3.0 C/W JC Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) IV Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD 22--A113, IPC/JEDEC J--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--Source Leakage Current I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 110 Vdc (BR)DSS (I =5mA,V =0Vdc) D GS Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V =100 Vdc, V =0Vdc) DS GS OnCharacteristics Gate Threshold Voltage V 1 1.68 3 Vdc GS(th) (V =10Vdc,I =28 Adc) DS D Gate Quiescent Voltage V 1.5 2.68 3.5 Vdc GS(Q) (V =50Vdc,I =30 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.26 Vdc DS(on) (V =10Vdc,I =70mAdc) GS D DynamicCharacteristics Reverse TransferCapacitance C 0.13 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 7.3 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 16.3 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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