DocumentNumber:MRF6V2300N
FreescaleSemiconductor
Rev. 5, 4/2010
TechnicalData
RFPowerFieldEffectTransistors
N--Channel Enhancement--ModeLateral MOSFETs
MRF6V2300NR1
Designed primarily for CW large--signal output and driver applications with
MRF6V2300NBR1
frequenciesupto600MHz.Devicesareunmatchedandaresuitableforusein
industrial, medical andscientific applications.
Typical CW Performance: V =50Volts,I = 900mA,
DD DQ
10--600MHz,300W,50V
P = 300Watts, f = 220MHz
out
LATERALN--CHANNEL
Power Gain 25.5dB
SINGLE--ENDED
Drain Efficiency 68%
BROADBAND
Capableof Handling10:1VSWR, @ 50Vdc, 220MHz, 300Watts CW
RFPOWERMOSFETs
Output Power
Features
CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters
CASE1486--03,STYLE1
TO--270 WB--4
QualifiedUptoaMaximum of 50V Operation
DD
PLASTIC
IntegratedESD Protection
MRF6V2300NR1
225C CapablePlastic Package
RoHSCompliant
InTapeandReel. R1Suffix = 500Units per 44mm, 13inchReel.
CASE1484--04,STYLE1
TO--272 WB--4
PLASTIC
MRF6V2300NBR1
PARTSARESINGLE--ENDED
Table1.MaximumRatings
Rating Symbol Value Unit
RF /V RF /V
Drain--Source Voltage V --0.5,+110 Vdc in GS out DS
DSS
Gate--SourceVoltage V --0.5,+10 Vdc
GS
StorageTemperatureRange T --65to+150 C
stg
RF /V RF /V
in GS out DS
CaseOperatingTemperature T 150 C
C
(1,2)
OperatingJunctionTemperature T 225 C
J
(Top View)
Table2.ThermalCharacteristics
Note: Exposedbacksideofthepackageis
(2,3)
Characteristic Symbol Value Unit
thesourceterminalforthetransistor.
ThermalResistance,JunctiontoCase
Figure1.PinConnections
CaseTemperature83C, 300W CW R 0.24 C/W
JC
Table3.ESDProtectionCharacteristics
TestMethodology Class
HumanBody Model(perJESD22--A114) 2(Minimum)
MachineModel(perEIA/JESD22--A115) A (Minimum)
ChargeDeviceModel(perJESD22--C101) IV (Minimum)
1. Continuous useat maximum temperaturewillaffect MTTF.
2. MTTFcalculatoravailableat Table4.MoistureSensitivityLevel
TestMethodology Rating PackagePeakTemperature Unit
PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C
Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted)
A
Characteristic Symbol Min Typ Max Unit
OffCharacteristics
Zero Gate Voltage Drain Leakage Current I 2.5 mA
DSS
(V =100Vdc,V =0Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 50 Adc
DSS
(V =50Vdc,V =0Vdc)
DS GS
Drain--SourceBreakdownVoltage V 110 Vdc
(BR)DSS
(I =150mA,V =0Vdc)
D GS
Gate--SourceLeakageCurrent I 10 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
OnCharacteristics
GateThresholdVoltage V 1 1.63 3 Vdc
GS(th)
(V =10Vdc,I =800Adc)
DS D
GateQuiescentVoltage V 1.5 2.6 3.5 Vdc
GS(Q)
(V =50Vdc,I =900mAdc,MeasuredinFunctionalTest)
DD D
Drain--SourceOn--Voltage V 0.28 Vdc
DS(on)
(V =10Vdc,I =2Adc)
GS D
DynamicCharacteristics
ReverseTransferCapacitance C 2.88 pF
rss
(V =50Vdc30mV(rms)ac @1MHz,V =0Vdc)
DS GS
OutputCapacitance C 120 pF
oss
(V =50Vdc30mV(rms)ac @1MHz,V =0Vdc)
DS GS
InputCapacitance C 268 pF
iss
(V =50Vdc,V =0Vdc30mV(rms)ac @1MHz)
DS GS
FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =900mA,P =300W,f=220MHz,CW
DD DQ out
PowerGain G 24 25.5 27 dB
ps
Drain Efficiency 66 68 %
D
Input ReturnLoss IRL --16 --9 dB
TypicalPerformances(InFreescale27MHz and450MHz TestFixtures,50ohm system)V =50Vdc,I =900mA,P =300W CW
DD DQ out
PowerGain f =27 MHz G 31.4 dB
ps
f=450MHz 21.7
Drain Efficiency f =27 MHz 61.5 %
D
f=450MHz 59.1
Input ReturnLoss f =27MHz IRL --17.4 dB
f=450MHz --24.4
ATTENTION: TheMRF6V2300NandMRF6V2300NB arehighpowerdevices andspecialconsiderations
must befollowedinboarddesignandmounting. Incorrect mountingcanleadtointernaltemperatures which
exceedthemaximum allowableoperatingjunctiontemperature. RefertoFreescaleApplication NoteAN3263
(forbolt downmounting)orAN1907 (forsolderreflowmounting)PRIORTOSTARTINGSYSTEMDESIGNto
ensurepropermountingofthesedevices.
MRF6V2300NR1MRF6V2300NBR1
RF DeviceData
FreescaleSemiconductor
2