DocumentNumber:MRF6V3090N FreescaleSemiconductor Rev. 2, 10/2015 TechnicalData RFPowerLDMOSTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6V3090N Designed for broadcast and commercialaerospace broadbandapplications MRF6V3090NB withfrequencies from 470to1215MHz. TypicalPerformance(UHF 470--860ReferenceCircuit): V =50Volts, DD I = 450mA, 64QAM, Input SignalPAR = 9.5dB 0.01%Probability DQ onCCDF. Output IMD 470--1215MHz,90W,50V P f G SignalPAR Shoulder out ps D BROADBAND SignalType (W) (MHz) (dB) (%) (dB) (dBc) RFPOWERLDMOSTRANSISTORS DVB--T(8k OFDM) 18Avg. 470 21.6 26.8 8.6 --31.8 650 22.9 28.0 8.7 --34.4 860 21.9 28.3 7.9 --29.2 TO--270WB--4 TypicalPerformance(L--Band960--1215MHz ReferenceCircuit): PLASTIC V =50Volts,I = 100mA. DD DQ MRF6V3090N P f P G out in ps D SignalType (W) (MHz) (W) (dB) (%) Pulse 90Peak 960 1.3 18.4 55.3 (128 sec,10%Duty 1030 1.41 18 56.9 Cycle) 1090 1.65 17.4 50.7 TO--272WB--4 1215 1.68 17.3 51.0 PLASTIC MRF6V3090NB Features Capableof Handling10:1VSWR, AllPhaseAngles, 50Vdc, 860MHz, PARTSARESINGLE--ENDED 90Watts CW Output Power CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters Internally Input Matchedfor Easeof Use QualifiedUptoaMaximum of 50V Operation DD IntegratedESD Protection Gate Drain Excellent ThermalStability Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation Gate Drain (TopView) Note: Exposedbacksideofthepackageis thesourceterminalforthetransistor. Figure1.PinConnections FreescaleSemiconductor, Inc., 2010--2011, 2015. All rights reserved. MRF6V3090NMRF6V3090NB RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature76C,18W CW,50Vdc,I =350mA,860MHz 0.79 DQ CaseTemperature80C,90W CW,50Vdc,I =350mA,860MHz 0.82 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(2001--4000V) MachineModel(perEIA/JESD22--A115) B (201--400V) ChargeDeviceModel(perJESD22--C101) IV (>1000V) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 0.5 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 115 Vdc (BR)DSS (I =50mA,V =0Vdc) D GS ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 20 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 0.9 1.6 2.4 Vdc GS(th) (V =10Vdc,I =200 Adc) DS D GateQuiescentVoltage V 2.0 2.7 3.5 Vdc GS(Q) (V =50Vdc,I =350mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.2 Vdc DS(on) (V =10Vdc,I =0.5Adc) GS D DynamicCharacteristics ReverseTransferCapacitance C 41 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 65.4 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS (4) InputCapacitance C 591 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat