DocumentNumber:MRF8P20165WH FreescaleSemiconductor Rev. 0, 4/2011 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8P20165WHR3 Designed for base station applications with wide instantaneous bandwidth MRF8P20165WHSR3 requirements coveringfrequencies from 1880to2025MHz. TypicalDoherty Single--Carrier W--CDMA Performance: V =28Volts, DD I = 550mA, V =1.3Vdc,P = 37Watts Avg., IQ Magnitude DQA GSB out Clipping, ChannelBandwidth= 3.84MHz, Input SignalPAR = 9.9dB 1930--1995MHz,37WAVG.,28V 0.01%Probability onCCDF. SINGLEW--CDMA G OutputPAR ACPR ps D LATERALN--CHANNEL Frequency (dB) (%) (dB) (dBc) RFPOWERMOSFETs 1930MHz 16.1 47.0 7.1 --27.7 1960MHz 16.3 47.7 7.1 --29.7 1995MHz 16.3 46.0 7.0 --33.3 Capableof Handling10:1VSWR, 32Vdc, 1960MHz, 173Watts CW Output Power (2dB Input Overdrivefrom RatedP ) out (1) Typical P 3dB CompressionPoint 190Watts out Features CASE465M--01,STYLE1 NI--780--4 Designedfor WideInstantaneous BandwidthApplications. VBW 100MHz. res MRF8P20165WHR3 Designedfor WidebandApplications that Require65MHz SignalBandwidth ProductionTestedinaSymmetricalDoherty Configuration 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithLarge--SignalLoad--PullParameters andCommon SourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C CASE465H--02,STYLE1 Operation NI--780S--4 Designedfor DigitalPredistortionError CorrectionSystems MRF8P20165WHSR3 RoHSCompliant NI--780--4inTapeandReel. R3Suffix = 250Units, 56mm TapeWidth, 13inchReel. For R5TapeandReeloption, seep. 15. NI--780S--4inTapeandReel. R3Suffix = 250Units, 32mm TapeWidth, 13inchReel. For R5TapeandReeloption, seep. 15. RF /V31 RF /V inA GSA outA DSA Table1.MaximumRatings Rating Symbol Value Unit RF /V42 RF /V Drain--SourceVoltage V --0.5,+65 Vdc inB GSB outB DSB DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD (TopView) StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 125 C C Figure1.PinConnections (2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature80C,37W CW,28Vdc,I =550mA,V =1.3Vdc,1960MHz 0.79 DQA GSB CaseTemperature114C,160W CW,28Vdc,I =550mA,V =1.3Vdc,1960MHz 0.53 DQA GSB 1. P3dB=P +7.0dBwhereP istheaverageoutputpowermeasuredusinganunclippedW--CDMAsingle--carrierinputsignalwhere avg avg outputPARis compressedto7.0dB 0.01%probability onCCDF. 2. Continuous useatmaximum temperaturewillaffectMTTF. 3. RefertoAN1955, Thermal Measurement Methodology of RF Power Amplifiers. GotoTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C(Minimum) MachineModel(perEIA/JESD22--A115) B (Minimum) ChargeDeviceModel(perJESD22--C101) III(Minimum) Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 5 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (2) OnCharacteristics (1) GateThresholdVoltage V 1.2 1.8 2.7 Vdc GS(th) (V =10Vdc,I =232 Adc) DS D GateQuiescentVoltage V 2.0 2.7 3.5 Vdc GS(Q) (V =28Vdc,I =550mAdc,MeasuredinFunctionalTest) DD DA (1) Drain--SourceOn--Voltage V 0.05 0.2 0.3 Vdc DS(on) (V =10Vdc,I =1.5Adc) GS D (2,3,4) FunctionalTests (InFreescaleDoherty ProductionTestFixture,50ohm system)V =28Vdc,I =550mA,V =1.3Vdc, DD DQA GSB P =37W Avg.,f1=1980MHz,f2=2010MHz,2--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=9.8dB 0.01% out Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 14.2 14.8 17.2 dB ps DrainEfficiency 40.6 44.3 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 5.2 5.8 dB AdjacentChannelPowerRatio ACPR --31.0 --28.7 dBc (4) TypicalBroadbandPerformance (InFreescaleDoherty CharacterizationTestFixture,50ohm system)V =28Vdc,I =550mA, DD DQA V =1.3Vdc,P =37W Avg.,Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=9.9dB 0.01%Probability on GSB out CCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1930MHz 16.1 47.0 7.1 --27.7 1960MHz 16.3 47.7 7.1 --29.7 1995MHz 16.3 46.0 7.0 --33.3 1. SideA andSideB aretiedtogetherforthis measurement. 2. V andV mustbetiedtogetherandpoweredby asingleDCpowersupply. DDA DDB 3. Partinternally matchedbothoninputandoutput. 4. MeasurementmadewithdeviceinaSymmetricalDoherty configuration. (continued) MRF8P20165WHR3MRF8P20165WHSR3 RF DeviceData FreescaleSemiconductor 2