X-On Electronics has gained recognition as a prominent supplier of MRF8P20165WHR3 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF8P20165WHR3 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF8P20165WHR3 NXP

MRF8P20165WHR3 electronic component of NXP
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Part No.MRF8P20165WHR3
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R
Datasheet: MRF8P20165WHR3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
250: USD 153.6402 ea
Line Total: USD 38410.05 
Availability - 0
MOQ: 250  Multiples: 250
Pack Size: 250
   
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We are delighted to provide the MRF8P20165WHR3 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF8P20165WHR3 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF8P20165WH FreescaleSemiconductor Rev. 0, 4/2011 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8P20165WHR3 Designed for base station applications with wide instantaneous bandwidth MRF8P20165WHSR3 requirements coveringfrequencies from 1880to2025MHz. TypicalDoherty Single--Carrier W--CDMA Performance: V =28Volts, DD I = 550mA, V =1.3Vdc,P = 37Watts Avg., IQ Magnitude DQA GSB out Clipping, ChannelBandwidth= 3.84MHz, Input SignalPAR = 9.9dB 1930--1995MHz,37WAVG.,28V 0.01%Probability onCCDF. SINGLEW--CDMA G OutputPAR ACPR ps D LATERALN--CHANNEL Frequency (dB) (%) (dB) (dBc) RFPOWERMOSFETs 1930MHz 16.1 47.0 7.1 --27.7 1960MHz 16.3 47.7 7.1 --29.7 1995MHz 16.3 46.0 7.0 --33.3 Capableof Handling10:1VSWR, 32Vdc, 1960MHz, 173Watts CW Output Power (2dB Input Overdrivefrom RatedP ) out (1) Typical P 3dB CompressionPoint 190Watts out Features CASE465M--01,STYLE1 NI--780--4 Designedfor WideInstantaneous BandwidthApplications. VBW 100MHz. res MRF8P20165WHR3 Designedfor WidebandApplications that Require65MHz SignalBandwidth ProductionTestedinaSymmetricalDoherty Configuration 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithLarge--SignalLoad--PullParameters andCommon SourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C CASE465H--02,STYLE1 Operation NI--780S--4 Designedfor DigitalPredistortionError CorrectionSystems MRF8P20165WHSR3 RoHSCompliant NI--780--4inTapeandReel. R3Suffix = 250Units, 56mm TapeWidth, 13inchReel. For R5TapeandReeloption, seep. 15. NI--780S--4inTapeandReel. R3Suffix = 250Units, 32mm TapeWidth, 13inchReel. For R5TapeandReeloption, seep. 15. RF /V31 RF /V inA GSA outA DSA Table1.MaximumRatings Rating Symbol Value Unit RF /V42 RF /V Drain--SourceVoltage V --0.5,+65 Vdc inB GSB outB DSB DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD (TopView) StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 125 C C Figure1.PinConnections (2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature80C,37W CW,28Vdc,I =550mA,V =1.3Vdc,1960MHz 0.79 DQA GSB CaseTemperature114C,160W CW,28Vdc,I =550mA,V =1.3Vdc,1960MHz 0.53 DQA GSB 1. P3dB=P +7.0dBwhereP istheaverageoutputpowermeasuredusinganunclippedW--CDMAsingle--carrierinputsignalwhere avg avg outputPARis compressedto7.0dB 0.01%probability onCCDF. 2. Continuous useatmaximum temperaturewillaffectMTTF. 3. RefertoAN1955, Thermal Measurement Methodology of RF Power Amplifiers. GotoTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C(Minimum) MachineModel(perEIA/JESD22--A115) B (Minimum) ChargeDeviceModel(perJESD22--C101) III(Minimum) Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 5 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (2) OnCharacteristics (1) GateThresholdVoltage V 1.2 1.8 2.7 Vdc GS(th) (V =10Vdc,I =232 Adc) DS D GateQuiescentVoltage V 2.0 2.7 3.5 Vdc GS(Q) (V =28Vdc,I =550mAdc,MeasuredinFunctionalTest) DD DA (1) Drain--SourceOn--Voltage V 0.05 0.2 0.3 Vdc DS(on) (V =10Vdc,I =1.5Adc) GS D (2,3,4) FunctionalTests (InFreescaleDoherty ProductionTestFixture,50ohm system)V =28Vdc,I =550mA,V =1.3Vdc, DD DQA GSB P =37W Avg.,f1=1980MHz,f2=2010MHz,2--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=9.8dB 0.01% out Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 14.2 14.8 17.2 dB ps DrainEfficiency 40.6 44.3 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 5.2 5.8 dB AdjacentChannelPowerRatio ACPR --31.0 --28.7 dBc (4) TypicalBroadbandPerformance (InFreescaleDoherty CharacterizationTestFixture,50ohm system)V =28Vdc,I =550mA, DD DQA V =1.3Vdc,P =37W Avg.,Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=9.9dB 0.01%Probability on GSB out CCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1930MHz 16.1 47.0 7.1 --27.7 1960MHz 16.3 47.7 7.1 --29.7 1995MHz 16.3 46.0 7.0 --33.3 1. SideA andSideB aretiedtogetherforthis measurement. 2. V andV mustbetiedtogetherandpoweredby asingleDCpowersupply. DDA DDB 3. Partinternally matchedbothoninputandoutput. 4. MeasurementmadewithdeviceinaSymmetricalDoherty configuration. (continued) MRF8P20165WHR3MRF8P20165WHSR3 RF DeviceData FreescaleSemiconductor 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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