X-On Electronics has gained recognition as a prominent supplier of MRF8S18260HSR6 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. MRF8S18260HSR6 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

MRF8S18260HSR6 NXP

MRF8S18260HSR6 electronic component of NXP
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Part No.MRF8S18260HSR6
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 65V 9-Pin Case 375J-02 T/R
Datasheet: MRF8S18260HSR6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 219.7029 ea
Line Total: USD 219.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the MRF8S18260HSR6 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF8S18260HSR6 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:MRF8S18260H Freescale Semiconductor Rev. 1, 2/2012 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S18260HR6 DesignedforCDMAandmulticarrierbasestationapplicationswith MRF8S18260HSR6 frequencies from1805to1880MHz.CanbeusedinClassABandClass Cfor alltypicalcellular basestationmodulationformats. TypicalSingle--Carrier W--CDMA Performance: V =30Volts,I = DD DQ 1805--1880MHz,74WAVG.,30V 1600mA, P = 74Watts Avg., IQ MagnitudeClipping, Channel out SINGLEW--CDMA Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability LATERALN--CHANNEL onCCDF. RFPOWERMOSFETs G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1805MHz 17.9 31.6 6.0 --35.0 1840MHz 17.9 31.9 6.0 --36.0 1880MHz 17.9 32.5 5.9 --36.0 Capableof Handling10:1VSWR, 32Vdc, 1840MHz, 374Watts CW Output Power (3dB Input Overdrivefrom RatedP ) CASE375I--04 out NI--1230--8 Typical P 1dB CompressionPoint 260Watts CW out MRF8S18260HR6 Features 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation CASE375J--03 Designedfor DigitalPredistortionError CorrectionSystems NI--1230S--8 MRF8S18260HSR6 Optimizedfor Doherty Applications InTapeandReel. R6Suffix = 150Units per 56mm, 13inchReel. Table1.MaximumRatings N.C.18 VBW Rating Symbol Value Unit 27 RF /V RF /V Drain--SourceVoltage V --0.5,+65 Vdc DSS in GS out DS Gate--SourceVoltage V --6.0,+10 Vdc GS 36 RF /V RF /V in GS out DS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg VBW N.C.45 CaseOperatingTemperature T 150 C C (TopView) (1,2) OperatingJunctionTemperature T 225 C J Figure1.PinConnections CW Operation T =25C CW 420 W C Derateabove25C 3.5 W/C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature81C,74W CW,30Vdc,I =1600mA,1805MHz 0.27 DQ (4) CaseTemperature88C,260W CW ,30Vdc,I =1600mA,1805MHz 0.26 DQ 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (1) OnCharacteristics GateThresholdVoltage V 1.1 1.9 2.6 Vdc GS(th) (V =10Vdc,I =400 Adc) DS D GateQuiescentVoltage V 2.6 Vdc GS(Q) (V =30Vdc,I =1600mA) DS D FixtureGateQuiescentVoltage V 4.3 5.1 5.8 Vdc GG(Q) (V =30Vdc,I =1600mA,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =4Adc) GS D (1,2) FunctionalTests (InFreescaleTestFixture,50ohm system)V =30Vdc,I =1600mA,P =74W Avg.,f=1805MHz, DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 16.8 17.9 19.0 dB ps DrainEfficiency 29.0 31.6 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 5.4 6.0 dB AdjacentChannelPowerRatio ACPR --35.0 --32.0 dBc InputReturnLoss IRL --19 --7 dB TypicalBroadbandPerformance(In Freescale Test Fixture, 50 ohm system) V =30Vdc,I = 1600 mA, P = 74 W Avg., Single--Carrier DD DQ out W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 1805MHz 17.9 31.6 6.0 --35.0 --19 1840MHz 17.9 31.9 6.0 --36.0 --18 1880MHz 17.9 32.5 5.9 --36.0 --8 1. Gates (Pins 2,3)anddrains (Pins 6,7)areconnectedinternally. 2. Partinternally matchedbothoninputandoutput. (continued) MRF8S18260HR6MRF8S18260HSR6 RF DeviceData FreescaleSemiconductor, Inc. 2

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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