DocumentNumber:MRF8S18260H Freescale Semiconductor Rev. 1, 2/2012 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S18260HR6 DesignedforCDMAandmulticarrierbasestationapplicationswith MRF8S18260HSR6 frequencies from1805to1880MHz.CanbeusedinClassABandClass Cfor alltypicalcellular basestationmodulationformats. TypicalSingle--Carrier W--CDMA Performance: V =30Volts,I = DD DQ 1805--1880MHz,74WAVG.,30V 1600mA, P = 74Watts Avg., IQ MagnitudeClipping, Channel out SINGLEW--CDMA Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability LATERALN--CHANNEL onCCDF. RFPOWERMOSFETs G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1805MHz 17.9 31.6 6.0 --35.0 1840MHz 17.9 31.9 6.0 --36.0 1880MHz 17.9 32.5 5.9 --36.0 Capableof Handling10:1VSWR, 32Vdc, 1840MHz, 374Watts CW Output Power (3dB Input Overdrivefrom RatedP ) CASE375I--04 out NI--1230--8 Typical P 1dB CompressionPoint 260Watts CW out MRF8S18260HR6 Features 100%PAR Testedfor GuaranteedOutput Power Capability CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation CASE375J--03 Designedfor DigitalPredistortionError CorrectionSystems NI--1230S--8 MRF8S18260HSR6 Optimizedfor Doherty Applications InTapeandReel. R6Suffix = 150Units per 56mm, 13inchReel. Table1.MaximumRatings N.C.18 VBW Rating Symbol Value Unit 27 RF /V RF /V Drain--SourceVoltage V --0.5,+65 Vdc DSS in GS out DS Gate--SourceVoltage V --6.0,+10 Vdc GS 36 RF /V RF /V in GS out DS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg VBW N.C.45 CaseOperatingTemperature T 150 C C (TopView) (1,2) OperatingJunctionTemperature T 225 C J Figure1.PinConnections CW Operation T =25C CW 420 W C Derateabove25C 3.5 W/C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature81C,74W CW,30Vdc,I =1600mA,1805MHz 0.27 DQ (4) CaseTemperature88C,260W CW ,30Vdc,I =1600mA,1805MHz 0.26 DQ 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (1) OnCharacteristics GateThresholdVoltage V 1.1 1.9 2.6 Vdc GS(th) (V =10Vdc,I =400 Adc) DS D GateQuiescentVoltage V 2.6 Vdc GS(Q) (V =30Vdc,I =1600mA) DS D FixtureGateQuiescentVoltage V 4.3 5.1 5.8 Vdc GG(Q) (V =30Vdc,I =1600mA,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =4Adc) GS D (1,2) FunctionalTests (InFreescaleTestFixture,50ohm system)V =30Vdc,I =1600mA,P =74W Avg.,f=1805MHz, DD DQ out Single--CarrierW--CDMA,IQ MagnitudeClipping,InputSignalPAR=7.5dB 0.01%Probability onCCDF.ACPRmeasuredin3.84MHz ChannelBandwidth 5MHzOffset. PowerGain G 16.8 17.9 19.0 dB ps DrainEfficiency 29.0 31.6 % D OutputPeak--to--AverageRatio 0.01%Probability onCCDF PAR 5.4 6.0 dB AdjacentChannelPowerRatio ACPR --35.0 --32.0 dBc InputReturnLoss IRL --19 --7 dB TypicalBroadbandPerformance(In Freescale Test Fixture, 50 ohm system) V =30Vdc,I = 1600 mA, P = 74 W Avg., Single--Carrier DD DQ out W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth 5MHzOffset. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 1805MHz 17.9 31.6 6.0 --35.0 --19 1840MHz 17.9 31.9 6.0 --36.0 --18 1880MHz 17.9 32.5 5.9 --36.0 --8 1. Gates (Pins 2,3)anddrains (Pins 6,7)areconnectedinternally. 2. Partinternally matchedbothoninputandoutput. (continued) MRF8S18260HR6MRF8S18260HSR6 RF DeviceData FreescaleSemiconductor, Inc. 2