Document Number: MRF9030 Freescale Semiconductor Rev. 8, 9/2008 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- MRF9030LR1 cies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. Typical Two-Tone Performance at 945 MHz, 26 Volts Output Power 30 Watts PEP Power Gain 19 dB 945 MHz, 30 W, 26 V Efficiency 41.5% LATERAL N-CHANNEL IMD -32.5 dBc BROADBAND Capable of Handling 10:1 VSWR, 26 Vdc, 945 MHz, 30 Watts CW RF POWER MOSFET Output Power Features Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. CASE 360B-05, STYLE 1 NI-360 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V - 0.5, +68 Vdc DSS Gate-Source Voltage V - 0.5, +15 Vdc GS Total Device Dissipation T = 25C P 92 W C D Derate above 25C 0.53 W/C Storage Temperature Range T - 65 to +150 C stg Case Operating Temperature T 150 C C Operating Junction Temperature T 200 C J Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 1.9 C/W JC Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) Freescale Semiconductor, Inc., 2008. All rights reserved. MRF9030LR1 RF Device Data Freescale Semiconductor 1 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGNTable 4. Electrical Characteristics (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 68 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 26 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 1 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 2 2.9 4 Vdc GS(th) (V = 10 Vdc, I = 100 Adc) DS D Gate Quiescent Voltage V 3.8 Vdc GS(Q) (V = 26 Vdc, I = 250 mAdc) DS D Drain-Source On-Voltage V 0.19 0.4 Vdc DS(on) (V = 10 Vdc, I = 0.7 Adc) GS D Forward Transconductance g 3 S fs (V = 10 Vdc, I = 2 Adc) DS D Dynamic Characteristics Input Capacitance C 49.5 pF iss (V = 26 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Output Capacitance C 26.5 pF oss (V = 26 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Reverse Transfer Capacitance C 1 pF rss (V = 26 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS (continued) MRF9030LR1 RF Device Data Freescale Semiconductor 2 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN